Micro heating device

A technology of micro-heating and heating structure, which is applied in the direction of electrical components, electric solid devices, circuits, etc., can solve the problems of unusable, inaccurate control of temperature, inability to accurately determine the magnitude of the current that generates heat, etc., to achieve uniform heating effect
CN103187397AActive Publication Date: 2013-07-03SEMICON MFG INT (SHANGHAI) CORP
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
SEMICON MFG INT (SHANGHAI) CORP
Publication Date
2013-07-03

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Abstract

The invention discloses a micro heating device which comprises a semiconductor substrate, a device to be detected that is located on the semiconductor substrate, an interlayer dielectric layer located on the surface of the semiconductor substrate, heat conduction grooves located in the semiconductor substrate and the interlayer dielectric layer, and heating structures located in the interlayer dielectric layer, wherein the heat conduction grooves surround the device to be detected; the heating structures are connected with the heat conduction grooves, and generate heat and conduct the heat into the heat conduction grooves; and the heat conduction grooves are utilized to heat the device to be detected. The heat conduction grooves surround the device to be detected, so that the device to be detected is heated uniformly, and temperature of the device to be detected is controlled by changing the heat generated by the heating structures and controlling the heat generated by the heat conduction grooves.
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Description

technical field

[0001] The invention relates to semiconductor manufacturing technology, in particular to a micro-heating device for heating up a device to be detected. Background technique

[0002] As the integration level of integrated circuits continues to increase, the device density and current rate in integrated circuits become higher and higher, and integrated circuits will generate higher and higher energy. Therefore, high-temperature reliability of devices in integrated circuits is becoming more and more important, and more and more tests on integrated circuits need to be performed at higher temperatures. For example, the electromigration detection of metal interconnection, the time-dependent dielectric test of the gate dielectric layer, the high temperature life test of the device, etc., all need to be carried out at a higher temperature in order to obtain the performance of the device at a higher temperature. electrical properties.

[0003] Traditional electromig...

Claims

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