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Covering materials for insulating substrates

A technology of insulating substrates and coating materials, which is applied in welding/cutting media/materials, applications, household appliances, etc., and can solve problems such as inability to achieve semiconductor component installation

Inactive Publication Date: 2015-11-25
SHOWA DENKO KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Here, when the Ni layer such as the Ni plating layer formed on the metal layer of the insulating substrate has a thickness of about several μm, due to the heat applied when the insulating substrate and the heat dissipation member are joined by brazing, and / Or the heat applied when joining the semiconductor element to the insulating substrate by soldering may cause large unevenness on the surface of the Ni layer, and as a result, the mounting of the semiconductor element on the insulating substrate may not be substantially realized.

Method used

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  • Covering materials for insulating substrates
  • Covering materials for insulating substrates
  • Covering materials for insulating substrates

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0198] In this Example 1, a figure 2 and the insulating substrate 1A of the above-mentioned first embodiment shown in 3. Its production method is as follows.

[0199] The lower plate is prepared as the Ni layer 4, the Ti layer 6, the first Al layer 7, the ceramic layer 10, and the third Al layer 16, respectively.

[0200] Ni layer 4: a pure Ni plate with a length of 25 mm x a width of 25 mm x a thickness of 50 μm

[0201] Ti layer 6: a pure Ti plate with a length of 25 mm x a width of 25 mm x a thickness of 200 μm

[0202] The first Al layer 7: a pure Al plate with a length of 25 mm x a width of 25 mm x a thickness of 600 μm

[0203] Ceramic layer 10: AlN plate of 25 mm in length x 25 mm in width x 600 μm in thickness

[0204] The third Al layer 16: a pure Al plate with a length of 25 mm x a width of 25 mm x a thickness of 600 μm.

[0205] The purity of the Ni plate forming the Ni layer 4 is JIS (Japanese Industrial Standard) Class 1. The purity of the Ti plate forming ...

Embodiment 2

[0211] In this Example 2, a Figure 5 The insulating substrate 1B of the above-mentioned second embodiment is shown. Its production method is as follows.

[0212] Lower plates were prepared as Ni layer 4 , Ti layer 6 , first Al layer 7 , second Al layer 8 , ceramic layer 10 , and third Al layer 16 .

[0213] Ni layer 4: a pure Ni plate with a length of 25 mm x a width of 25 mm x a thickness of 20 μm

[0214] Ti layer 6: a pure Ti plate with a length of 25 mm x a width of 25 mm x a thickness of 20 μm

[0215] The first Al layer 7: a pure Al plate with a length of 25 mm x a width of 25 mm x a thickness of 40 μm

[0216] The second Al layer 8: a pure Al plate with a length of 25 mm x a width of 25 mm x a thickness of 600 μm

[0217] Ceramic layer 10: AlN plate of 25 mm in length x 25 mm in width x 600 μm in thickness

[0218] The third Al layer 16: a pure Al plate with a length of 25 mm x a width of 25 mm x a thickness of 600 μm.

[0219] The purity of the Ni plate forming ...

Embodiment 3

[0225] In this Example 3, the same method as in Example 2 above was produced Figure 5 The insulating substrate 1B of the above-mentioned second embodiment is shown. Its production method is as follows.

[0226] Lower plates were prepared as Ni layer 4 , Ti layer 6 , first Al layer 7 , second Al layer 8 , ceramic layer 10 , and third Al layer 16 .

[0227] Ni layer 4: a pure Ni plate with a length of 25 mm x a width of 25 mm x a thickness of 15 μm

[0228] Ti layer 6: a pure Ti plate with a length of 25 mm x a width of 25 mm x a thickness of 15 μm

[0229] The first Al layer 7: an Al plate with a length of 25 mm x a width of 25 mm x a thickness of 100 μm

[0230] The second Al layer 8: a pure Al plate with a length of 25 mm x a width of 25 mm x a thickness of 600 μm

[0231] Ceramic layer 10: AlN plate of 25 mm in length x 25 mm in width x 600 μm in thickness

[0232] The third Al layer 16: a pure Al plate with a length of 25 mm x a width of 25 mm x a thickness of 600 μm....

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Abstract

A clad material 1A for insulating substrates is provided with a Ni layer 4 made of Ni or a Ni alloy, a Ti layer 6 made of Ti or a Ti alloy and arranged on one side of the Ni layer, and a first Al layer 7 made of Al or an Al alloy and arranged on one side of the Ti layer 6 that is opposite to a side of the Ti layer 6 on which the Ni layer 4 is arranged. The Ni layer 4 and the Ti layer 6 are joined by clad rolling. A Ni—Ti series superelastic alloy layer 5 formed by alloying at least Ni of constituent elements of the Ni layer 4 and at least Ti of constituent elements of the Ti layer 6 is interposed between the Ni layer 4 and the Ti layer 6. The Ti layer 6 and the first Al layer 7 are joined by clad rolling in an adjoining manner.

Description

technical field [0001] The present invention relates to a covering material for an insulating substrate used for heat dissipation of a semiconductor element, a manufacturing method thereof, a base (base) for a semiconductor module, and a semiconductor module. [0002] In addition, in this specification, the term "board" is used in the meaning including "foil". Background technique [0003] Semiconductor modules such as power semiconductor modules dissipate heat generated from semiconductor elements due to the operation of the semiconductor elements, and therefore include heat dissipation components (eg, heat sinks, coolers). Furthermore, in this semiconductor module, a heat dissipation insulating substrate for transferring heat generated from the semiconductor element to the heat dissipation member is arranged between the semiconductor element and the heat dissipation member. Although this insulating substrate is a thermal conductor, it functions as an electrical insulator....

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/14B32B15/01B32B15/04
CPCH01L23/3735B23K1/0016B23K35/0222B23K35/0238B23K35/286B23K35/325B23K2201/40B32B9/005B32B9/041B32B15/01B32B15/017B32B15/20B32B2307/206B32B2307/302B32B2307/51B32B2307/734B32B2457/00B32B2457/14C22C14/00C22C19/03C22C21/00H01L2924/0002Y10T156/10Y10T428/12611Y10T428/12743B23K2101/40H01L2924/00H01L23/14B32B15/04
Inventor 大泷笃史大山茂
Owner SHOWA DENKO KK
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