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Preparation method of Cu-In-Ga-Se ink

A copper indium gallium selenide and ink technology, applied in the field of solar cells, can solve problems such as increased process costs and environmental hazards

Active Publication Date: 2014-11-12
浙江弘康半导体技术股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The final selenization step has certain environmental hazards, because hydrogen selenide gas is toxic, and the method requires high temperature, which also increases the process cost

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] The preparation of nanoparticles was carried out in a nitrogen-filled glove box to prevent oxidation of the powder. According to the chemical equivalent ratio of Cu0.98ln0.7Ga0.3Se2.5, the raw materials are: copper selenide, indium selenide, gallium selenide, copper gallium alloy, copper indium alloy and selenium powder, all of which are 325 mesh powder. The planetary rolling wet ball mill is adopted, the grinding jar and the ball are zirconia ceramic balls, the ratio of alcohol to powder is 1:100; the ratio of ball to material is 2:1; the grinding time is 15~25h; the rotation speed is 200rpm; the revolution speed is 500rpm. Dissolve ball mill powder in a mixed solution of toluene and oleylamine, and centrifuge at 2000rpm for 10 minutes to obtain particles of 3-20 nanometers and 200-400 nanometers. In the mixed solution, the volume ratio of oleylamine to toluene is 5:100, and ball milling The weight ratio of powder to mixed solution is 20:100. Add 10% by weight of 3-20...

Embodiment 2

[0030] The preparation of nanoparticles was carried out in a nitrogen-filled glove box to prevent oxidation of the powder. According to the chemical equivalent ratio of Cu0.98ln0.7Ga0.3Se2.5, the raw materials are: copper selenide, indium selenide, gallium selenide, copper gallium alloy, copper indium alloy and selenium powder, all of which are 325 mesh powder. The planetary rolling wet ball mill is adopted, the grinding jar and the ball are zirconia ceramic balls, the ratio of alcohol to powder is 5:100; the ratio of ball to material is 10:1; the grinding time is 25h; the rotation speed is 500rpm; the revolution speed is 800rpm. Dissolve ball mill powder in a mixed solution of toluene and oleylamine, and centrifuge at 2000rpm for 10 minutes to obtain particles of 3-20 nanometers and 200-400 nanometers. In the mixed solution, the volume ratio of oleylamine to toluene is 5:100, and ball milling The weight ratio of powder to mixed solution is 60:100. Add 10% by weight of 3-20 n...

Embodiment 3

[0036]The preparation of nanoparticles was carried out in a nitrogen-filled glove box to prevent oxidation of the powder. According to the chemical equivalent ratio of Cu0.98ln0.7Ga0.3Se2.5, the raw materials are: copper selenide, indium selenide, gallium selenide, copper gallium alloy, copper indium alloy and selenium powder, all of which are 325 mesh powder. The planetary rolling wet ball mill is adopted, the grinding jar and the ball are zirconia ceramic balls, the ratio of alcohol to powder is 3:100; the ratio of ball to material is 4:1; the grinding time is 20h; the rotation speed is 400rpm; the revolution speed is 600rpm. Dissolve ball mill powder in a mixed solution of toluene and oleylamine, and centrifuge at 7000rpm for 5 minutes to obtain particles of 3-20 nanometers and 200-400 nanometers. In the mixed solution, the volume ratio of oleylamine to toluene is 5:100, and the ball mill The weight ratio of powder to mixed solution is 30:100. Add 10% by weight of 3-20 nan...

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Abstract

The invention discloses a preparation method of a Cu-In-Ga-Se ink. The preparation method comprises the following steps of: obtaining raw materials, and carrying out wet planetary rolling ball milling, centrifugal separation and filtration to obtain particles of 3-20nm and 200-400nm; adding 10wt% of particles of 3-20nm into 90wt% of powder of 200-400nm to obtain Cu-In-Ga-Se particles; preparing a water-based solvent and an organic-based solvent; and adding 0.3-3wt% of sodium chloride and 40-70wt% of Cu-In-Ga-Se particles into the water-based solvent or the organic-based solvent, and carrying out ultrasonic treatment in an ultrasonic basin for 1h to prepare a water-based ink or organic-based ink. In the invention, large-sized nano particles are prepared by using a top-to-bottom method, the Cu-In-Ga-Se ink is also prepared, and the preparation method is used for producing Cu-Zn-Sn-Se solar cells by using a non-vacuum method. By using the traditional ball milling method, the direct mechanical-chemical reaction of various mixtures at low temperature can be realized, and no chemical solvents are needed. The preparation method is environment-friendly, free of chemical solutions, waste generation and expensive vacuum equipment as well as economical and practical.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a method for preparing copper indium gallium selenide ink. Background technique [0002] CIGS solar cells usually consist of a rigid glass substrate or flexible stainless steel, as well as molybdenum layer, p-type CIGS absorber layer, cadmium sulfide or zinc sulfide buffer layer, intrinsic zinc oxide, transparent conductive Oxide window layer (TCO) and surface contact layer. Copper Indium Gallium Selenide ink is at the heart of CIGS battery production. The current manufacturing methods of copper indium gallium selenide solar cells can be roughly divided into vacuum method and non-vacuum method. Vacuum methods mainly include co-evaporation method and sputtering plus post-selenization treatment method. [0003] Co-evaporation: A common deposition method in both laboratory and commercial applications. Co-evaporation uses multiple evaporation sources to fabricate the CIGS abs...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09D11/00H01L31/032H01L31/18
CPCY02P70/50
Inventor 徐从康
Owner 浙江弘康半导体技术股份有限公司