Palladium-plated gold-plated double-plating bonding copper wire

Abstract

The invention discloses a palladium-plated gold-plated double-plating bonding copper wire of a three-layer structure. The innermost layer is a copper core formed due to the fact that trace metal elements are added to high-purity copper, a pure-palladium conductive layer plates the surface of the copper core, and a pure-gold conductive layer plates the surface of the pure-palladium conductive layer. The trace metal elements include tin, magnesium and aluminum.

Description

technical field [0001] The invention belongs to the field of semiconductor integrated circuit chip packaging, and in particular relates to a double-coated copper wire for semiconductor integrated circuit chip bonding. Background technique [0002] Although the chip obtained after the semiconductor integrated circuit is manufactured has a specific function, it must be connected with external electronic components to realize this function. The semiconductor integrated circuit chip needs to go through a bonding process with the package body, and finally get the chip package, so that it can be connected to external electronic components through the package pins. In the bonding process of the chip and the package, the bonding pads on the chip are electrically connected to the pins of the package through bonding wires. Therefore, the bonding wire is an essential material to realize the function of the chip. In the prior art, the Chinese authorized patent CN102130067B discloses a...

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is to provide a double-coated bonding copper wire to overcome the defects of poor electrical conductivity and poor ductility of existing palladium-plated or silver-plated bonding copper wires

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