Semiconductor device and method for manufacturing semiconductor device
A semiconductor and substrate technology, applied in semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., can solve problems such as diffusion into polycrystalline silicon or single crystal silicon layers, expensive substrates, etc.
Inactive Publication Date: 2013-08-14
JI FU MACHINERY & EQUIP
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- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
For conventional semiconductor and / or LCD manufacturing processes, certain physical properties of the substrate and / or semiconductor layers may be required in order to prevent the diffusion of impurities from the substrate into the polysilicon or monocrystalline silicon layer, or to maintain subsequent processing (e.g., For subsequent photolithographic processing, flatness of the substrate and / or semiconductor layers), relatively expensive substrates may be used
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[0017] The foregoing Summary, as well as the following Detailed Description of certain embodiments of the subject matter described herein, will be better understood when read in conjunction with the accompanying drawings. As used herein, an element or step recited in the singular and preceded by the word "a" or "an" should be understood as not excluding plural forms of said elements or steps, unless the exclusion is expressly stated below. Furthermore, the recitation of "one embodiment" is not to be interpreted as excluding the existence of additional embodiments that also incorporate the recited features. Also, an embodiment that "comprises" or "has" one or more elements having a particular property may include additional such elements not having that property, unless expressly stated to the contrary.
[0018] According to one or more embodiments described herein, a solar cell having a polysilicon layer deposited directly onto a substrate is provided. The substrate may be fo...
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The invention relates to a semiconductor device and a method for manufacturing the semiconductor device. The method for manufacturing a semiconductor device includes providing a substrate upon which the semiconductor device is to be disposed, heating the substrate to a first temperature that exceeds at least one of a softening point or glass transition temperature of the substrate, and depositing a polysilicon layer onto the substrate. A semiconductor device includes a substrate having at least one of a softening point, Ts, that is less than 600 degrees Celsius and a polysilicon layer disposed on an upper surface of the substrate such that the polysilicon layer abuts the substrate.
Description
technical field [0001] The subject matter described herein relates to semiconductor devices, such as diodes for solar cell applications, other photovoltaic devices, photosensors, displays such as liquid crystal displays (LCDs), and the like. Some known semiconductor devices include a silicon layer formed from silicon. The silicon layer may include an intrinsic silicon layer and doped volumes or regions that provide donors and acceptors for the device or sensor. Alternatively, the silicon layer may provide an active layer in a photovoltaic device that absorbs incident light and converts it into electrical current. Background technique [0002] In general, the efficiency of a semiconductor device may depend on the crystallinity and / or defect density of a semiconductor (eg, silicon) layer in the semiconductor device. For example, monocrystalline silicon solar cells may be relatively more efficient at converting incident light into electrical current than polycrystalline silic...
Claims
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IPC IPC(8): H01L31/18H01L31/0352
CPCH01L31/18H01L31/182H01L31/0352H01L31/03921H01L31/03682Y02E10/546Y02P70/50
Inventor J·王
Owner JI FU MACHINERY & EQUIP