Check patentability & draft patents in minutes with Patsnap Eureka AI!

Voltage self-adaptation bi-directional analog switch circuit

A bidirectional analog switch and self-adaptive technology, applied in electronic switches, electrical components, pulse technology, etc., can solve the problems of low cut-off withstand voltage and small conduction current, and achieve the effect of improving the conduction current and cut-off withstand voltage

Inactive Publication Date: 2013-08-14
赵恩海
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there are disadvantages such as small conduction current and low cut-off withstand voltage.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Voltage self-adaptation bi-directional analog switch circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0009] exist figure 1 Among them, the sources of the N-type switch field effect transistor T1 and the N-type switch field effect transistor T2 are connected to the switch tube voltage dividing resistor R2, the gate charge release resistor R3, and the resistance of the voltage regulator transistor D1. Their gates are connected to the other end of the switching tube voltage dividing resistor R2, the cathode of the voltage regulator tube D1, and the switching tube voltage dividing resistor R1. The drain of the N-type gate charge release field effect transistor T3 is connected to the other end of the gate charge release resistor R3, the source is grounded, and the gate is connected to the release transistor current limiting resistor R6. The drain of the P-type high-voltage field effect transistor T4 is connected to the other end of the switch tube voltage dividing resistor R1, the source is connected to the high voltage tube voltage dividing resistor R4, and the gate is connected ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a voltage self-adaptation bi-directional analog switch circuit. When a voltage signal input by a switch control end is the logic '0', a field-effect tube T4 is communicated with a field-effect tube T5, and a field-effect tube T3 is closed; a voltage signal input by a high voltage end opens a field-effect tube T1 and a field-effect tube T2 through divider resistance R1, divider resistance R2 and the partial pressure of a voltage-regulator tube D1, so that two input / output ends are communicated; and when the voltage signal input by the switch control end is the logic '1', the field-effect tube T4 and the field-effect tube T5 are closed, the T3 is communicated, and the field-effect tube T1 and the field-effect tube T2 are closed, so that the two input / output ends are closed. The voltage-regulator tube D1 enables voltage between grid electrodes and source electrodes of the field-effect tube T1 and the field-effect tube T2 to be smaller than the safety limit, so that the analog switch circuit can adapt to various voltage environments.

Description

technical field [0001] The invention relates to a bidirectional analog switch circuit capable of adapting to various voltage environments. Background technique [0002] Bidirectional analog switch is a circuit often used in analog circuits, and it is widely used in electronic equipment such as communication, radar, computer, automatic control, and measuring instruments. At present, bidirectional analog switch circuits are mainly realized by ASICs, photorelays and other devices. However, there are disadvantages such as small conduction current and low cut-off withstand voltage. Contents of the invention [0003] In order to overcome the shortcomings of the existing bidirectional analog switch circuit with small conduction current and low cut-off withstand voltage, the present invention provides a bidirectional analog switch circuit. Withstand voltage and adapt to a wide voltage range. [0004] The technical solution adopted by the present invention to solve its technical...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H03K17/10H03K17/12
Inventor 赵恩海
Owner 赵恩海
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com