Method for flattening thin film surface, array substrate and its preparation method, and display device
A surface planarization and array substrate technology, which is applied in semiconductor/solid-state device manufacturing, instruments, electrical components, etc., can solve problems such as surface flatness damage
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Embodiment 1
[0038] The invention provides a processing method for flattening the surface of a thin film after dry etching. After pattern etching is performed on a non-metallic layer by dry etching, the surface of a first film layer exposed after dry etching is flattened. processing, so that the first film layer whose surface is rough due to dry etching is restored to be flat, and the first film layer is located under the non-metallic layer.
[0039] Dry etching is a pattern transfer method commonly used in the semiconductor field. It usually uses ion bombardment to bombard the film layer without photoresist (or other protective layer) protection, so that the film layer protected by photoresist will be bombarded. The pattern remains, but at the same time, it will damage the surface flatness of the first film layer below the etched film layer (when the first film layer is a non-metallic material, the damage is particularly serious), making the first film layer rough, Subsequent film formati...
Embodiment 2
[0051] This embodiment provides a method for fabricating an array substrate, such as figure 1 As shown, the method includes:
[0052] 101. Pattern etching is performed on the non-metallic layer by dry etching, and after pattern etching is performed on the non-metallic layer by dry etching, the method further includes:
[0053] 102. Perform a surface planarization treatment on the first film layer, so that the first film layer whose surface is rough due to dry etching is restored to be flat, and the first film layer is located below the non-metallic layer.
[0054] Wherein, the first film layer described in this embodiment is a general term for the film layer located under the etched film layer. For example, optionally, for an array substrate with a bottom gate structure, when the non-metallic layer is a semiconductor layer, the The first film layer is a gate insulating layer.
[0055] During the preparation of the array substrate, dry etching is often used to etch the non-me...
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