Semiconductor component coating film processing method

Abstract

The invention discloses a semiconductor component coating film processing method which includes a first step of conducting thinning on a wafer before conducting back coating on a reflective layer, a second step of conducting invisible laser cutting on the wafer, a third step of enabling the wafer which the invisible laser cutting is conducted on to be attached and bonded to a firm substrate, a fourth step of conducting the back coating on an oxidized layer or a metal layer, a fifth step of conducting peeling on the attached and bonded substrate after the back coating is completed, and a sixth step of conducting separation. Through addition of the process that the wafer is attached and bonded to the firm substrate, the semiconductor component coating film processing method solves the problems that in the prior art, the wafer is fragile and difficult to process and is easily broken when attached through only one adhesive tape after the invisible cutting.

Description

[0001] technical field [0002] The invention relates to the technical field of semiconductors, and more specifically, relates to a coating process method for semiconductor elements. [0003] Background technique [0004] In the existing semiconductor LED manufacturing process, when the back is coated with a reflective film, if the back coating layer is impenetrable to the stealth dicing laser, during the process of crystal dicing, the reflection of the laser on the metal layer will cause A situation where stealth dicing cannot be performed from the back-plated surface occurs. When the back-plated reflective film layer contains metal, if the invisible cutting is performed from the front side of the die, that is, the non-back-plated surface, since the laser action is close to the LED epitaxial layer (EPI layer), it is easy to cause component leakage. In order to solve the problem that invisible dicing cannot be performed from the back-plated surface after the back-p...

AI Technical Summary

Problems solved by technology

[0004] In the existing semiconductor LED manufacturing process, when the back is coated with a reflective film, if the back coating layer is impenetrable to the stealth dicing laser, during the process of crystal dicing, the reflection of the laser on the metal layer will cause Occurs when stealth dicing cannot be performed from the back-plated surface

When the back-plated reflective film layer contains metal, if the invisible cutting is performed from the front side of the crystal grain, that is, the non-back-plated surface, because the laser action is close to the LED epitaxial layer (EPI layer), it is easy to cause component leakage

In order to solve the problem that invisible dicing cannot be performed from the back-plated surface after the back-plated metal film layer, there is also a process that performs invisible dicing on the back of the wafer before back-plating, and then sticks tape on the front of the wafer. back plating

However, the above method has at least several disadvantages. If the subsequent back plating contains an oxide layer, the oxide layer coating must be carried out in an environment of about 120~200°C. The above-mentioned front adhesive tape must have the characteristics of high temperature resistance and no adhesive residue, which is expensive. and not easy to obtain

Because the wafer has been thinned and cut invisible before the back plating, the wafer is already in a semi-separated state. It is still difficult to solve the problem of difficult follow-up operations only by sticking tape on the front. Any cutting part is cracked, resulting in fragments, which is not conducive to the subsequent process

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