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Chemical mechanical polishing (CMP) device and system

A technology of chemical machinery and grinding devices, which is applied in the direction of grinding devices, grinding machine tools, grinding/polishing equipment, etc., can solve the problems of removing uneven thickness, reducing wafer scrap rate, etc., and achieve good inter-wafer uniformity, effective Conducive to heat dissipation, remove the effect of uniform thickness

Active Publication Date: 2013-09-18
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The problem solved by the present invention is to keep the polishing temperature constant in the chemical mechanical polishing process, thereby reducing or even avoiding the phenomenon of uneven removal thickness when polishing the wafer, and reducing the scrap rate of the wafer

Method used

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  • Chemical mechanical polishing (CMP) device and system
  • Chemical mechanical polishing (CMP) device and system
  • Chemical mechanical polishing (CMP) device and system

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0056] Figure 4 It is a cross-sectional view of the chemical mechanical polishing device provided in Embodiment 1; Figure 5 It is an enlarged schematic diagram of the heat dissipation device in Embodiment 1; Image 6 It is a schematic plan view of the cooling device in Embodiment 1; in combination with Figure 4 , Figure 5 with Image 6 , the chemical mechanical grinding device comprises:

[0057] polishing table 24;

[0058] A polishing pad 26 fixed above the polishing table 24;

[0059] Polishing head 20, the end face of described polishing head 20 cooperates with described polishing pad 26, is used for grinding wafer 23;

[0060] The clamping ring 22 is arranged on the edge of the end face of the polishing head 20 to clamp the wafer 23, and the thickness of the clamping ring 22 is equal to or smaller than the thickness of the wafer 23;

[0061] Shaft 21, arranged above the polishing head 20, is used to drive the polishing head 20 to rotate and move;

[0062] The ...

Embodiment 2

[0074] The following is the second embodiment of the present invention, which is different from the structure in which the cooling device is arranged on the outside of the polishing head in the previous embodiments. In the second embodiment, the cooling device of the chemical mechanical polishing device is a cooling chamber, which is arranged on the polishing Pad 36 and polishing table 34 (see Figure 7 )between.

[0075] Figure 7 is a schematic cross-sectional view of the chemical mechanical polishing device provided in Example 2; Figure 8 is a schematic cross-sectional view of the heat sink in Embodiment 2; Figure 9 yes Figure 8 A schematic plan view of the cooling device; Figure 10 yes Figure 8 A side view of the heat sink.

[0076] combine Figure 7 with Figure 8 , in this embodiment, the chemical mechanical polishing device includes a polishing table 34, a polishing pad 36, a polishing head 30, a clamping ring 32, a shaft 31, a transmission member 35, a pip...

Embodiment 3

[0085] The following is the third embodiment of the present invention. Different from the previous two examples, such as Figure 11 As shown, the chemical mechanical grinding device of the third embodiment is provided with a first heat dissipation device 49 on the outside of the polishing head 40, and a heat dissipation chamber 59 is set between the polishing pad 46 and the polishing table 44 (the second cooling device). The first heat dissipation device 49 may be the same as that in Embodiment 1, and the second heat dissipation device 59 may be the same as that in Embodiment 2. Please refer to Embodiment 1 and Embodiment 2 for specific structures.

[0086] The present invention also provides a chemical mechanical polishing system, comprising:

[0087] 1 or more chemical mechanical grinding devices as described in embodiments one to three;

[0088] 1 or more cleaning chambers;

[0089] 1 or more transfer devices.

[0090] The cleaning chamber is used for cleaning the wafe...

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Abstract

The invention discloses a chemical mechanical polishing (CMP) device. The chemical mechanical polishing device comprises a polishing table, a polishing cushion, a polishing heat, a clamping ring, a first radiating device and a second radiating device, wherein the polishing cushion is fixed on the polishing table; the end face of the polishing head is matched with the polishing cushion for grinding a wafer; the clamping ring is arranged on the edge of the end face of the polishing head for clamping the wafer; the first radiating device is arranged around the outer side of the polishing head; and the second radiating device is arranged between the polishing cushion and the polishing table. The invention further provides a chemical polishing system. Due to the adoption of the technical scheme provided by the invention, the requirement of keeping the polishing temperature constant in a chemical mechanical polishing process which cannot be realized by using the conventional CMP device is met, the phenomenon of non-uniform removing thickness of a CMP wafer is avoided, and the rejection rate of the wafer is reduced.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a chemical mechanical polishing device and system. Background technique [0002] The Chemical Mechanical Planarization (CMP) process is a planarization process. Since it was introduced into the integrated circuit manufacturing process in 1990, after continuous practice and development, it has become a key process to promote the continuous shrinking of the integrated circuit technology node. At present, CMP has been widely used in shallow trench isolation structure planarization, gate electrode planarization, tungsten plug planarization, copper interconnection planarization and other processes. The CMP process is also applied to remove thin film layers on the surface of the substrate. [0003] For related technologies of CMP, reference may be made to US Patent No. 5,722,875, which discloses a polishing method and apparatus (methodandappartusforpolishing). [0004] fig...

Claims

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Application Information

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IPC IPC(8): B24B37/04B24B37/34B24B57/02H01L21/304
Inventor 陈枫
Owner SEMICON MFG INT (SHANGHAI) CORP
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