Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Ho-doped ScVO4 luminous material and crystal growth method for same using melt method

A technology for crystal growth and luminescent materials, applied in crystal growth, luminescent materials, polycrystalline material growth, etc., can solve problems such as low efficiency, and achieve the effects of saving production costs, easy operation, and low equipment requirements

Inactive Publication Date: 2013-09-25
HEFEI JINGQIAO PHOTOELECTRIC MATERIAL
View PDF4 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But inefficiency is the main problem with this class of laser crystals

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Ho-doped ScVO4 luminous material and crystal growth method for same using melt method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] Preparation of HozSc with Ho doping concentration of 0.5 at% 1-z VO 4 Single crystal:

[0018] (1) Using Ho 2 o 3 、Sc 2 o 3 , V 2 o 5 As a raw material, carry out batching according to the following compound formula:

[0019]

[0020] The composition of each component of this raw material is as follows:

[0021] Ho 2 o 3 0.35%

[0022] sc 2 o 3 65.9553 %

[0023] V 2 o 5 33.6947%

[0024] And these raw materials are fully mixed evenly to obtain the ingredient mixture.

[0025] (2) Using Ho 2 o 3 、Sc 2 o 3 , V 2 o 5 As the raw material, the ingredients are mixed according to the following compound formula. After they are fully mixed, they are pressed, pre-fired at 60°C for 51 minutes, pressed again, and then sintered after cooling: the re-sintering temperature is 980°C, and the sintering time is After 48 hours, the polycrystalline raw materials required for growing crystals were obtained:

[0026] (3) Put the initia...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a Ho-doped scandium vanadate (Ho<z>Sc<1-z>VO4) luminous material (z is less than or equal to 0.1 and is more than or equal to 0.0001). Raw materials prepared according to a ratio are fully mixed, compacted and shaped, and sintered in a high temperature, and then a starting material for crystal growth is prepared. The starting material for crystal growth is added into a crucible and heated to be fully melted, and then initial melt for melt method crystal growth is prepared. Then crystal growth is carried out by using a melt method such as a Czochralski method, a Bridgman-Stockbarge method, a temperature gradient technique method, and other melt methods. The Ho<z>Sc<1-z>VO4 provided by the invention can be used as luminous and displaying materials, 2-micron laser materials, and the like.

Description

technical field [0001] The invention relates to the field of luminescent materials and crystal growth, Ho-doped scandium vanadate HozSc 1-z VO 4 , and their melt crystal growth method. Background technique [0002] Ho-doped luminescent materials are important 2 μm band laser crystals, which have broad application prospects in medical, national defense, information, scientific research and other fields. But inefficiency is the main problem with this class of laser crystals. Therefore, exploring new Ho-doped laser crystals with excellent performance is an important topic at present. SCVO 4 With stable chemical characteristics and excellent physical properties, HozSc1-zVO4 has good luminescence performance, therefore, Ho:ScVO is expected to become a new type of laser crystal with excellent performance in the 2μm band. Contents of the invention [0003] The object of the invention is to provide rare earth vanadate Ho z sc 1-z VO 4 The luminescent material and its melt ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C30B29/30C09K11/82
Inventor 林鸿良陈俊
Owner HEFEI JINGQIAO PHOTOELECTRIC MATERIAL
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com