Ho-doped ScVO4 luminous material and crystal growth method for same using melt method

A technology for crystal growth and luminescent materials, applied in crystal growth, luminescent materials, polycrystalline material growth, etc., can solve problems such as low efficiency, and achieve the effects of saving production costs, easy operation, and low equipment requirements

Inactive Publication Date: 2013-09-25
HEFEI JINGQIAO PHOTOELECTRIC MATERIAL
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

But inefficiency is the main pro...

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  • Ho-doped ScVO4 luminous material and crystal growth method for same using melt method

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] Preparation of HozSc with Ho doping concentration of 0.5 at% 1-z VO 4 Single crystal:

[0018] (1) Using Ho 2 o 3 、Sc 2 o 3 , V 2 o 5 As a raw material, carry out batching according to the following compound formula:

[0019]

[0020] The composition of each component of this raw material is as follows:

[0021] Ho 2 o 3 0.35%

[0022] sc 2 o 3 65.9553 %

[0023] V 2 o 5 33.6947%

[0024] And these raw materials are fully mixed evenly to obtain the ingredient mixture.

[0025] (2) Using Ho 2 o 3 、Sc 2 o 3 , V 2 o 5 As the raw material, the ingredients are mixed according to the following compound formula. After they are fully mixed, they are pressed, pre-fired at 60°C for 51 minutes, pressed again, and then sintered after cooling: the re-sintering temperature is 980°C, and the sintering time is After 48 hours, the polycrystalline raw materials required for growing crystals were obtained:

[0026] (3) Put the initia...

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Abstract

The invention discloses a Ho-doped scandium vanadate (Ho<z>Sc<1-z>VO4) luminous material (z is less than or equal to 0.1 and is more than or equal to 0.0001). Raw materials prepared according to a ratio are fully mixed, compacted and shaped, and sintered in a high temperature, and then a starting material for crystal growth is prepared. The starting material for crystal growth is added into a crucible and heated to be fully melted, and then initial melt for melt method crystal growth is prepared. Then crystal growth is carried out by using a melt method such as a Czochralski method, a Bridgman-Stockbarge method, a temperature gradient technique method, and other melt methods. The Ho<z>Sc<1-z>VO4 provided by the invention can be used as luminous and displaying materials, 2-micron laser materials, and the like.

Description

technical field [0001] The invention relates to the field of luminescent materials and crystal growth, Ho-doped scandium vanadate HozSc 1-z VO 4 , and their melt crystal growth method. Background technique [0002] Ho-doped luminescent materials are important 2 μm band laser crystals, which have broad application prospects in medical, national defense, information, scientific research and other fields. But inefficiency is the main problem with this class of laser crystals. Therefore, exploring new Ho-doped laser crystals with excellent performance is an important topic at present. SCVO 4 With stable chemical characteristics and excellent physical properties, HozSc1-zVO4 has good luminescence performance, therefore, Ho:ScVO is expected to become a new type of laser crystal with excellent performance in the 2μm band. Contents of the invention [0003] The object of the invention is to provide rare earth vanadate Ho z sc 1-z VO 4 The luminescent material and its melt ...

Claims

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Application Information

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IPC IPC(8): C30B29/30C09K11/82
Inventor 林鸿良陈俊
Owner HEFEI JINGQIAO PHOTOELECTRIC MATERIAL
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