Epitaxial wafer of light emitting diode

Abstract

The invention discloses an epitaxial wafer of a light emitting diode and belongs to the technical field of semiconductors. The epitaxial wafer comprises a substrate, a buffer layer, an n-type layer, a multi-quantum-well layer and a p-type layer, wherein the buffer layer, the n-type layer and the multi-quantum-well layer and the p-type layer are sequentially laminated on the substrate. The epitaxial wafer further comprises a stress releasing layer arranged between the n-type layer and the multi-quantum-well layer. The stress releasing layer is of a multi-cycle structure. Each cycle comprises an InxGa1-xN layer and a GaN layer growing on the InxGa1-xN layer. In each cycle structure of the stress releasing layer, thicknesses of the InxGa1-xN layer increase progressively from bottom to top. Due to the facts that the stress releasing layer is arranged between the n-type layer and the multi-quantum-well layer and is of the multi-cycle structure, and the thicknesses of the InxGa1-xN layer increase progressively from bottom to top, accumulated stress between the substrate and the n-type layer can be progressively released, and luminous efficiency of the epitaxial wafer is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an epitaxial wafer of a light emitting diode. Background technique [0002] As a highly influential new product in the emerging industry of information optoelectronics, light-emitting diodes have the characteristics of small size, long service life, colorful colors, and low energy consumption. They are widely used in lighting, display screens, signal lights, backlights, toys and other fields. . Wherein, the light emitting diode generally includes an epitaxial wafer and electrodes disposed on the epitaxial wafer. [0003] The epitaxial wafer generally includes a substrate, and a buffer layer, an n-type layer, a multi-quantum well layer and a p-type layer stacked on the substrate in sequence. Due to the lattice mismatch between the n-type layer and the multi-quantum well layer, the crystal quality of the epitaxial wafer is poor, and leakage current is easy to form. In orde...

AI Technical Summary

Problems solved by technology

[0005] In the existing epitaxial wafer, the InGaN layer is grown between the n-type layer and the multi-quantum well layer. The InGaN layer cannot effectively release the stress accumulated between the n-type layer and the substrate, which affects the quality and luminous efficiency of the epitaxial wafer.

Images