Epitaxial wafer of light emitting diode
A technology of light-emitting diodes and epitaxial wafers, applied in the field of epitaxial wafers, can solve the problems that the InGaN layer cannot effectively release stress, affect the quality of epitaxial wafers and luminous efficiency, and achieve the effect of improving luminous efficiency
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[0031] The embodiment of the present invention provides an epitaxial wafer of a light emitting diode, such as figure 1 As shown, the epitaxial wafer includes: a substrate 11, and a buffer layer 12, an n-type layer 13, a stress release layer, a multiple quantum well layer 15 and a p-type layer 16 laminated on the substrate 11 in sequence. The stress release layer 14 is Multi-period structure, each period includes In x Ga 1-x N layer 141 and grown on In x Ga 1-x The GaN layer 142 on the N layer 141, the In in each periodic structure of the stress release layer 14 x Ga 1-x The thickness of the N layer 141 increases from bottom to top, see figure 2 .
[0032] It should be noted that the “bottom” in “from bottom to top” refers to the In contact with the n-type layer 13 x Ga 1-x N layer, "up" refers to the In which is closest to the multiple quantum well layer 15 x Ga 1-x N layer.
[0033] Preferably, as image 3 As shown in the schematic diagram of the conduction band, t...
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