Insulated gate bipolar transistor drive protective circuit

A technology for driving protection circuits and bipolar transistors, applied in the field of power electronics, can solve the problems of inconvenient use and low reliability of driving protection circuits, and achieve the effect of improving reliability

Active Publication Date: 2013-10-09
山东大学(威海)
View PDF5 Cites 13 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, a comprehensive analysis of the current various drive protection circuit schemes has different emphases, but none of the circuit schemes has all the above-mentioned features, so the reliability of the drive protection circuit is not high, which brings inconvenience to use.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Insulated gate bipolar transistor drive protective circuit
  • Insulated gate bipolar transistor drive protective circuit
  • Insulated gate bipolar transistor drive protective circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] The basic structural composition and working principle of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0021] Such as figure 2 Shown, the present invention mainly comprises:

[0022] Two power supplies VB+ and VB- are used to provide the working voltage. In this embodiment, VB+ selects +15V, and VB- selects -15V;

[0023] An insulated gate bipolar transistor IGBT for controlling load on-off;

[0024] Optocoupler P1 is mainly used to realize the electrical isolation between the control circuit and the main circuit. Its input terminal is connected to the pulse signal from the control pulse input circuit of the control system. The output terminal is equivalent to an OC gate. The output voltage is used to control the bipolar On-off of transistor VT1 and bipolar transistor VT3;

[0025] The primary amplifier circuit mainly includes a transistor VT1, which is used to amplify the primary power of the gate pulse re...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides an insulated gate bipolar transistor drive protective circuit. The protective circuit mainly comprises a VB+ power source, a VB- power source, an insulated gate bipolar transistor IGBT, an input impulse control circuit, an optocoupler P1, a primary amplifying circuit, a secondary amplifying circuit, a Vce monitoring protective circuit and an output circuit. The output circuit is mainly composed of a bipolar transistor circuit and a power source circuit and can output positive 15V impulse voltage and negative 15V impulse voltage. The positive 15V impulse voltage and the negative 15V impulse voltage output by the output circuit can enable the insulated gate bipolar transistor IGBT to be effectively communicated under different conditions of communication rising time and cutoff falling time. On application occasions with high interference, the negative 15V impulse voltage provided by the output circuit can enable the insulated gate bipolar transistor IGBT to be cut off reliably, and working reliability of the insulated gate bipolar transistor IGBT is improved.

Description

technical field [0001] The circuit of the invention belongs to the field of power electronics, and in particular relates to a drive protection circuit for an insulated gate bipolar transistor (IGBT). Background technique [0002] Insulated gate bipolar transistor IGBT is a composite device of MOSFET and bipolar transistor. It not only has the advantages of high input impedance of power MOSFET, fast working speed and easy driving, but also has the advantages of low saturation voltage of bipolar Darlington power tube GTO, large current capacity and high withstand voltage, and can work normally in the frequency range of tens of KHz Therefore, it occupies a dominant position in the application of high-frequency and medium-power equipment (such as frequency converters, UPS power supplies, high-frequency welding machines, etc.). The driving protection circuit of IGBT is the difficulty and key point of its application scheme design, and the driving protection circuit with excellen...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H03K17/567H03K17/08
Inventor 王松李晓坤李广大历杰
Owner 山东大学(威海)
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap