Unlock instant, AI-driven research and patent intelligence for your innovation.

Production method for flat substrate with low defect density

A manufacturing method and low-defect technology, applied in chemical instruments and methods, crystal growth, electrical components, etc., can solve problems such as fragile and fragile thin film structures, accumulation of lattice misalignment of semiconductor materials, and reduced probability of electron and hole recombination , to achieve the effect of improving light output efficiency, increasing light output efficiency, and reducing total reflection phenomenon

Inactive Publication Date: 2013-10-30
NANOCRYSTAL ASIA
View PDF5 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] like figure 1 The bump 200 on the surface of the gallium nitride thin film 100 (GaN Film) shown often exists in such as figure 2 The existing conventional LED epitaxy structure shown in the figure can easily lead to uneven surface of each layer of film in the LED process in the later stage, coupled with the result of accumulation of lattice misalignment of semiconductor materials, resulting in a fragile and brittle film structure
The occurrence of this phenomenon will reduce the quantum efficiency inside the overall LED epitaxy structure, in other words, it will reduce the probability of recombination of electrons and holes, that is, reduce the light output efficiency of the LED (Light Output Efficiency)

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Production method for flat substrate with low defect density
  • Production method for flat substrate with low defect density
  • Production method for flat substrate with low defect density

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0058] In order to further explain the technical means and effects of the present invention to achieve the intended purpose of the invention, the specific implementation methods, methods, Steps, features and effects thereof are described in detail below.

[0059] see image 3 Shown is a flowchart of a method for manufacturing a flat substrate with low defect density according to an embodiment of the present invention. A manufacturing method (S100) of a flat substrate with a low defect density in this embodiment includes the following steps: providing a substrate (step S10); performing selective growth (step S20); performing lateral crystal growth (step S30); Perform lateral bonding (step S40); perform high temperature annealing (step S50); perform LED structure growth (step S60).

[0060] see Figure 4A and Figure 4B as shown, Figure 4A is a cross-sectional view of a structure of a substrate according to an embodiment of the present invention. Figure 4B It is a top vi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention discloses a production method for a flat substrate with low defect density. The method includes steps of: providing a substrate, performing selective growth of nanowires, performing lateral epitaxial growth of the nanowires, performing lateral coalescence of widened nanowires, performing high temperature annealing, and performing LED structure growth. The production method of the present invention generates vertical and lateral growth of the nanowires by choosing different concentrations of additives to produce a flat film, and generate a high efficiency LED semiconductor structure after annealing the flat film.

Description

technical field [0001] The invention relates to a method for manufacturing a low-defect-density flat substrate, in particular to a method for manufacturing a low-defect-density flat substrate with vertically and laterally grown nanocolumns to form an LED single crystal semiconductor structure with better light output efficiency. Background technique [0002] In the prior art, gallium nitride thin film (GaN Film) is often manufactured by adding different concentrations of additives to make gallium nitride (GaN) nanocolumn (Nanowire) undergo lateral growth (Epitaxy Lateral Overgrowth). Additives can make each nano-column independently and gradually widen its width vertically upwards. Since a specific concentration of additives will only widen the lateral width of the nano-column to a certain limit, it will not widen again. Therefore, additives with different concentration gradients can be used to control the width of the nano-column. The width of the column. After the additiv...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00
CPCC30B25/04H01L33/007
Inventor 李崇民李恩加
Owner NANOCRYSTAL ASIA