Check patentability & draft patents in minutes with Patsnap Eureka AI!

Semiconductor interconnect structure

An interconnection structure, semiconductor technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc.

Active Publication Date: 2013-11-06
TAIWAN SEMICON MFG CO LTD
View PDF4 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Thus, while existing multilayer devices and methods of making multilayer devices are generally suitable for their intended purposes, they are not entirely satisfactory in all respects

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor interconnect structure
  • Semiconductor interconnect structure
  • Semiconductor interconnect structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0029] It should be understood that the following invention provides a number of different embodiments or examples for implementing different components of the various embodiments. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are examples only and are not intended to be limiting. For example, the description below that a first component is formed on or on a second component may include an embodiment in which the first component and the second component are formed in direct contact, and may also include an embodiment in which an additional component may be formed on the first component and the second component. An embodiment in which the first part and the second part may not be in direct contact between two parts. In addition, the present invention may repeat reference numerals and / or letters in various instances. This repetition is for simplicity and clarity, and does not in itself dictate a relati...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present disclosure provides an interconnect structure for a semiconductor device. The interconnect structure includes a first metal layer that contains a first metal line. The interconnect structure includes a dielectric layer located over the first metal layer. The dielectric layer contains a first sub-via electrically coupled to the first metal line and a second sub-via electrically coupled to the first sub-via. The second sub-via is different from the first sub-via. The interconnect structure includes a second metal layer located over the dielectric layer. The second metal layer contains a second metal line electrically coupled to the second sub-via. No other metal layer is located between the first metal layer and the second metal layer.

Description

technical field [0001] The present invention generally relates to the field of semiconductor technology, and more particularly relates to semiconductor interconnection structures. Background technique [0002] The semiconductor integrated circuit (IC) industry has experienced rapid growth. Technological advances in IC materials and design have produced multiple IC generations, where each generation has smaller and more complex circuits than the previous generation. These advances, however, have increased the complexity of handling and manufacturing ICs, requiring similar developments in IC processing and manufacturing for these advances to be realized. In the course of IC evolution, functional density (ie, the number of interconnected devices per unit chip area) generally increases, while geometry size (ie, the smallest component that can be made using a fabrication process) decreases. [0003] As the semiconductor industry progresses to nanotechnology process nodes in pur...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/522H01L21/768
CPCH01L23/53295H01L23/5283H01L23/5226H01L21/768H01L23/522H01L23/5329H01L21/76816H01L2924/0002H01L2924/00H01L21/28
Inventor 赖志明黄文俊刘如淦陈笔聪
Owner TAIWAN SEMICON MFG CO LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More