Unlock instant, AI-driven research and patent intelligence for your innovation.

Low power consumption non-resistor full CMOS voltage reference circuit

A voltage reference, resistance-free technology, applied in the direction of adjusting electrical variables, control/regulating systems, instruments, etc., can solve the problems of high power consumption and high resistance process requirements, and achieve the effect of low power consumption

Inactive Publication Date: 2013-11-27
UNIV OF ELECTRONIC SCI & TECH OF CHINA
View PDF6 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to solve the problems that existing reference circuits need to use resistors, high process requirements and large power consumption, and propose a new type of low power consumption non-resistance full CMOS voltage reference circuit

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Low power consumption non-resistor full CMOS voltage reference circuit
  • Low power consumption non-resistor full CMOS voltage reference circuit
  • Low power consumption non-resistor full CMOS voltage reference circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0016] The present invention will be further elaborated below in conjunction with the accompanying drawings and specific embodiments.

[0017] The structure of the low power consumption non-resistance full CMOS voltage reference circuit of the present invention is as follows: figure 1 As shown, it consists of a bias current module, a positive temperature voltage module, a negative temperature voltage module and a voltage superposition module. The following describes the circuit structure and connection relationship of the modules respectively.

[0018] Such as figure 2 As shown, the bias current module circuit structure includes PMOS transistor MP0, PMOS transistor MP1, PMOS transistor MP2, PMOS transistor MP3, and NMOS transistor MN0, NMOS transistor MN1, NMOS transistor MN2, NMOS transistor MN3, NMOS transistor MN4, and NMOS transistor MNC1. The bias current module adopts a self-bias structure with negative feedback. MN1, MN2, MN3, MN4, MP1, MP2 and MP3 form the core circ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a voltage reference circuit. Aiming at the problems that an existing reference circuit needs resistors and is high in technology requirement and large in power consumption, a low power consumption non-resistor full CMOS voltage reference circuit is provided. According to the technical scheme, the low power consumption non-resistor full CMOS voltage reference circuit comprises a bias current module, a positive temperature voltage module, a negative temperature voltage module and a voltage superposition module. Voltage superposition is used for outputting voltage reference, and the temperature coefficient of the voltage reference is reduced through selection of filed effect transistor structural parameters. According to the low power consumption non-resistor full CMOS voltage reference circuit, power consumption is low, the resistors are not needed, any type of bipolar transistors are not needed either, and the integrated circuit can be manufactured by the adoption of a standard CMOS technology, so that the application range and flexibility are obviously improved.

Description

technical field [0001] The invention belongs to the technical field of integrated circuits, and in particular relates to a low-power non-resistance full CMOS (Complementary Metal Oxide Semiconductor) voltage reference circuit. Background technique [0002] The reference source is an indispensable module in all electronic systems, and its characteristics are directly related to the overall performance of the system. Therefore, high-performance reference sources play an important role in many applications, covering pure analog circuits, mixed-signal circuits and pure digital circuits. Among the many reference sources, the bandgap reference source is the most widely used, but it requires the use of resistors, and has high process requirements and high power consumption. Sometimes it needs to use bipolar process or BiCMOS (bipolar compIementary metal oxide semiconductor) process to achieve . Contents of the invention [0003] The object of the present invention is to solve t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G05F3/24
Inventor 周泽坤朱世鸿苟超张其营张庆岭许天辉崔佳男张波
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA