Method for manufacturing three-dimensional through hole interconnection structure based on molten glass skeleton

Abstract

The invention discloses a method for manufacturing a three-dimensional through hole interconnection structure based on a molten glass skeleton, and relates to the interconnection technology of silicon through holes. Grooves are etched in a silicon layer, and silicon columns are formed. A screen printing plate with a pattern is made to align at the etched pattern of the silicon layer. Glass powder is arranged on the screen printing plate. The glass powder is extruded in the vertical direction to be filled into the grooves, and the screen printing plate is moved away. The glass powder on the surfaces of the tops of the silicon columns is removed. The silicon layer filled with the glass powder is heated and molten, no bubble exists inside the silicon layer, a molten glass structure is obtained after cooling, the silicon layer of the obtained molten glass structure is arranged in etching liquid, the remaining molten glass structure on the surfaces of the tops of the silicon columns is removed by the adoption of the wet etching technology, and the molten glass skeleton inside the grooves is obtained. By the adoption of the mechanical lapping mode, the lower portion of the silicon layer is machined in a thinned mode until the bottoms of the silicon columns are exposed out of the lower portion of the silicon layer, then, lapping damage is repaired by the adoption of the chemical mechanical polishing mode, and therefore the three-dimensional through hole interconnection structure based on the molten glass skeleton is obtained.

Description

technical field

[0001] The invention relates to silicon through-hole interconnection technology, in particular to a method for manufacturing a three-dimensional through-hole interconnection structure based on a molten glass skeleton. Background technique

[0002] The three-dimensional integration based on through-silicon via interconnection is a new packaging technology, which can provide electrical signal interconnection in the vertical direction, reduce the parasitic capacitance and power consumption of the wiring, and increase the transmission speed. At the same time, it can greatly increase the density of packaging, reduce the size of the chip, and is widely used in the cross-layer connection of integrated circuits (IC) and micro-electromechanical systems (MEMS).

[0003] The traditional through-silicon via technology (TSV) fabrication method mainly includes: fabrication of TSV, insulation of TSV and filling of TSV. Its process see figure 1 , can be summarized as: Step...

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