Preparation method for back face local contact structure of crystalline silicon solar cell
A local contact and solar cell technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of high industrialization cost, high equipment investment, high precision requirements, etc., to reduce production investment, ensure stability, and simple operation Effect
Inactive Publication Date: 2013-11-27
XIAN HUANGHE PHOTOVOLTAIC TECH
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Problems solved by technology
Laser grooving technology requires high equipment investment and high precision, and the large power will cause certain damage to the silicon wafer; the method of printing mask and printing corrosion paste not only requires equipment investment, but also requires continuous consumption of auxiliary materials, and the industrialization cost also higher
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[0040] Such as figure 1 The structure of a typical back-passivated crystalline silicon solar cell is shown. The upper surface of the cell is a crystalline silicon substrate with a textured surface and an anti-reflection film 1 and a metal electrode 2 on the upper surface. A double layer of silicon dioxide and silicon nitride is deposited on the back surface. passivation film 3 and aluminum back field 4 .
[0041] 1. Design the mask pattern according to the required rear passivation structure of crystalline silicon solar cells. In this example, the mask plate style is selected from the attached figure 2The linear mask composed of mask strips is shown; the parameters are designed as the width of the mask strip is 0.3mm, the width of the contact point with the silicon wafer is 0.1mm, the line spacing is 2mm, and the thickness of the mask strip is 1.5mm. The contact area of the silicon wafer (that is, the uncoated passivation area) accounts for 5% of the total area of the s...
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The invention provides a preparation method for a back face local contact structure of a crystalline silicon solar cell. Mask plate design is carried out according to needs of cell back face local contact parameters; a silicon chip after felting, diffusion and phosphorosilicate glass removing is put in a chip carrier boat, and a mask plate is placed on the back surface of the silicon chip; then a passive film sedimentation technology is carried out; the upper surface of the silicon chip is plated by an anti-reflection coating, electrode printing and sintering technologies of the back surface and the upper surface are carried out in sequence, and finally the complete cell structure is obtained. The preparation method is simple and can not cause damage to the silicon chip, technological processes do not need to be increased, and due to repeated using of the mask plate, cost investment in the respect of technology appliances is greatly reduced.
Description
technical field [0001] The invention relates to a photovoltaic cell of a crystalline silicon solar cell, in particular to a method for preparing a local contact structure on the back of a crystalline silicon solar cell. Background technique [0002] A solar cell is a device that converts sunlight into electrical energy, and is one of the clean energy technologies that have developed very rapidly in recent years. As the mainstream of the solar cell market, although the production process of crystalline silicon cells is relatively mature, it still faces the problem of high cost, which fundamentally limits the large-scale use of solar cells. How to improve battery conversion efficiency and reduce production costs has become the most urgent problem to be solved in the industry. [0003] Since there is very little room for improving the efficiency of conventional processes, various new processes and methods have been introduced into the production of crystalline silicon solar ce...
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IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 李小玄李大伟刘洪波巨小宝
Owner XIAN HUANGHE PHOTOVOLTAIC TECH