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Transient voltage suppressor and manufacture method thereof

A technology for transient voltage suppression and manufacturing methods, applied in the manufacture of transient voltage suppressors, and in the field of transient voltage suppressors, can solve the problems of low impurity concentration, low breakdown voltage, and difficulty in realization

Active Publication Date: 2013-12-04
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This high-temperature, long-time annealing will cause the impurities of the P-type substrate to expand to the N-type epitaxial layer, resulting in too low impurity concentration on the side of the P-region in the Zener diode, making it difficult to achieve a lower breakdown voltage

Method used

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  • Transient voltage suppressor and manufacture method thereof
  • Transient voltage suppressor and manufacture method thereof
  • Transient voltage suppressor and manufacture method thereof

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Embodiment Construction

[0046] like figure 1 As shown, the transient voltage suppressor of the present invention includes: a P-type epitaxial layer 2 with a thickness of 6um to 12um on a low-resistance N-type substrate 1, and a P-type isolation well 3 and a P-type epitaxial layer 2 are formed in parallel in the P-type epitaxial layer 2. The deep P well 4, the P type isolation well 3 and the deep P well 4 are in contact with the N type substrate 1, and the P type implantation region 5 in the P type epitaxial layer 2 is formed between the two P type isolation wells 3, and the P type The isolation well 3, the deep P well 4 and the P-type implant region 5 have boron impurities, and the N-type implant region 6 formed above the P-type implant region 5, and the N-type implant region 7 formed in the deep P well 4; The N-type implant region 6 above the implant region 5 and the N-type implant region 7 in the deep P well 4 are connected to one end a of the suppressor, and the N-type substrate is connected to th...

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Abstract

The invention discloses a transient voltage suppressor which comprises a P-type epitaxial layer on an N-type substrate, a P-type injection region formed in the P-type epitaxial layer between two P-type isolation wells, an N-type injection region formed above the P-type injection region and an N-type injection region formed in a deep P well, wherein the P-type isolation wells and the deep P well are formed in the P-type epitaxial layer in parallel and are in contact with the N-type substrate. The N-type injection region formed above the P-type injection region and the N-type injection region formed in the deep P well are connected to form one end of the suppressor, and the N-type substrate is connected to form the other end of the suppressor. The invention further discloses a manufacture method of the transient voltage suppressor. The purpose of enabling the breakdown voltage of a Zener diode in the transient voltage suppressor is not influenced by high temperature annealing of the isolation wells can be achieved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a transient voltage suppressor. The invention also relates to a manufacturing method of the transient voltage suppressor. Background technique [0002] Transient voltage suppressor (TVS tube, Transient Voltage Suppressor), TVS is a high-efficiency protection device in the form of a diode. When the two poles of the TVS diode are impacted by reverse transient high energy, it can -12 The speed of the order of seconds changes the high impedance between the two poles to low impedance, absorbs the surge power of up to several thousand watts, clamps the voltage between the two poles at a predetermined value, effectively protects the precision components in the electronic circuit, and avoids Damaged by various surge pulses. TVS diodes have a very wide range of applications, and can provide surge voltage protection in various circuits, transmission lines and electrical equipm...

Claims

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Application Information

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IPC IPC(8): H01L27/02H01L21/8222
Inventor 刘冬华段文婷石晶胡君钱文生
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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