Fabrication process of patterned sapphire substrate

Abstract

The invention relates to a method for manufacturing a patterned induction coupling plasma sapphire substrate. The manufacturing process includes the following steps: cleaning the sapphire substrate to be treated; aligning and installing the sapphire with the substrate, and setting the front side at a set distance to evenly coat the substrate; 1.3 according to the preset Exposure conditions for projection exposure; developing the exposed substrate; performing dry etching on the developed substrate, using the photoresist on the surface of the substrate as an etching mask; setting induction coupled plasma etching After the temperature and vacuum degree of the chamber, and the temperature controlled by the cooling cycle machine, the dry-etched substrate is placed on the carrier base in the etching chamber; the substrate is processed by inductively coupled plasma etching gas Etching, controlling the etching speed and quality through the output frequency source and the power of the refraction frequency source; at the same time, cooling the carrier base through the cooling cycle machine. Our production method of inductively coupled plasma sapphire substrate will greatly improve productivity, pattern consistency, high yield and stable process.

Description

technical field [0001] The invention relates to the field of manufacturing sapphire substrates, in particular to a method for manufacturing a patterned inductively coupled plasma sapphire substrate. Background technique [0002] At present, sapphire is mostly used as the substrate material of LED, because the sapphire substrate has the characteristics of mature technology, high mechanical strength and stable device. Most of the sapphire substrates for GaN growth are C-plane sapphire substrates. This is mainly because the process of growing sapphire crystals along the C-axis is mature, the cost is relatively low, and the physical and chemical properties are stable. The technology for epitaxy on the C-plane is mature and stable. However, the GaN thin film grown on the C-plane sapphire substrate is grown along its polar axis, that is, the c-axis direction, and the thin film has spontaneous polarization and piezoelectric polarization effect, resulting in a strong internal (activ...

AI Technical Summary

Problems solved by technology

[0003] Various substrate patterns are now made, but the steps are cumbersome, and a certain pattern needs to be made with a photomask in advance, and the productivity is low, the pattern consistency is low, the yield is low, and the process is unstable.

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