Wafer cutting method

A cutting method and wafer technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of wafer cracking, wafer warpage, and delamination between metal layers, etc., to improve cutting and cracking. Effect

Active Publication Date: 2013-12-11
北京中科微知识产权服务有限公司
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  • Abstract
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Problems solved by technology

However, when ultra-thin wafers are processed using traditional processes, the wafers are prone to warping after grinding, and wafer cracks are likely to occur during subsequent processing operations; delamination between metal layers

Method used

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Embodiment Construction

[0018] In order to make the above objects, features and advantages of the present invention more comprehensible, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0019] Reference herein to "one embodiment" or "an embodiment" refers to a particular feature, structure or characteristic that can be included in at least one implementation of the present invention. "In one embodiment" appearing in different places in this specification does not all refer to the same embodiment, nor is it a separate or selective embodiment that is mutually exclusive with other embodiments.

[0020] In the wafer cutting method of the present invention, multiple dicing lines are first formed on the front of the wafer by laser cutting, and then the back of the wafer is thinned by a grinding process, thereby forming a plurality of separated chips. Since the laser (laser) cutting is adopted first and then the grindin...

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Abstract

The invention provides a wafer cutting method. The wafer cutting method includes the steps that a wafer is provided, wherein the wafer comprises a front face and a back face corresponding to the front face; cutting is conducted from the front face of the wafer to the back face of the wafer through a laser cutting technology so that a plurality of cutting channels can be formed in the front face of the wafer; a grinding adhesive film is attached to the front face with the formed cutting channels of the wafer; back face grinding is conducted on the wafer which is provided with the grinding adhesive film in an attaching mode, the cutting channels are made to penetrate through the ground wafer, and therefore a plurality of separated chips can be formed. Due to the facts that laser cutting is used first, then the grinding process is adopted, and laser cutting can not generate cutting stress, the wafer cutting method not only can avoid rupture of thin wafers but also can be applied to cutting wafers with low dielectric constants.

Description

【Technical field】 [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a wafer cutting method. 【Background technique】 [0002] In the semiconductor manufacturing process, it is necessary to cut the wafer (wafer) into individual chips (die), and then make these chips into different semiconductor package structures. Please refer to figure 1 As shown in , it is a top view of a wafer 100 . The wafer 100 includes a front side 110 and a back side corresponding to the front side 110, wherein the front side 110 is provided with several vertical and horizontal cutting streets (Cutting streets) 120 to define several of the wafer 100 Chip 130. Wherein, the front side 110 of the wafer 100 refers to the surface on which components, laminates, interconnection lines, bonding pads, etc. are formed on the semiconductor substrate. [0003] The wafer dicing method in the prior art usually includes: firstly using the grinding wheel of the grin...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/78
Inventor 陆建刚
Owner 北京中科微知识产权服务有限公司
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