Target manufacturing method

A production method and target material technology, which is applied in the field of sputtering target materials, can solve the problems of unreachable, expensive raw materials and waste of tungsten-titanium target materials.
CN103447535AActive Publication Date: 2013-12-18KONFOONG MATERIALS INTERNATIONAL CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
KONFOONG MATERIALS INTERNATIONAL CO LTD
Publication Date
2013-12-18

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Abstract

The invention discloses a target manufacturing method which includes the steps: collecting waste targets; providing powder stock for manufacturing targets; placing the waste targets and the powder stock into a mould and then placing the mould into a vacuum furnace with a pressure head inside; vacuumizing the vacuum furnace until the vacuum furnace reaches a preset vacuum degree; heating the vacuum furnace to reach a preset temperature after the vacuum furnace reaches the preset vacuum degree, and tightly pressing the waste targets and the powder stock to reach a preset pressure intensity by the aid of the pressure head; performing heat preservation and pressure maintenance for a period of time, then gradually releasing pressure, cooling the vacuum furnace and taking out the targets. Under the action of high temperature and high pressure, the powder stock and the waste targets can be closely connected and combined into a whole, so that the targets with needed sizes are obtained. The vacuum furnace can be adjusted to reach the preset temperature and the preset pressure intensity step by step in a few stages, the heating and pressurizing process of the vacuum furnace is more gentle, and the finally formed targets are better in compactness.
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Description

technical field

[0001] The invention belongs to the field of sputtering targets, in particular to a manufacturing method of a target. Background technique

[0002] Since the 1990s, the simultaneous development of targets and sputtering technology has greatly met the development needs of various new electronic devices. etc. have been widely used. However, the sputtering life of the existing target is limited, the utilization rate is not high, and the target is not recycled after being used once, resulting in great waste. For example, tungsten-titanium (W / Ti) alloy has been successfully applied to the diffusion barrier layer of Al, Cu and Ag wiring due to its low resistivity, good thermal stability and oxidation resistance. Therefore, tungsten-titanium target has become It is one of the research hotspots of the target. However, the utilization rate of tungsten-titanium targets is often less than one-third, and tungsten-titanium targets are not recycled after being used once...

Claims

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