Thin film transistor, array substrate and display panel

Abstract

The invention discloses a thin film transistor, an array substrate and a display panel. The thin film transistor comprises a grid electrode, a first insulating layer, a second insulating layer, a semiconductor layer, a source electrode, a drain electrode and a conductive layer, wherein the first insulating layer is arranged on the grid electrode, the second insulating layer is arranged above the first insulating layer, the semiconductor layer, the source electrode and the drain electrode are arranged between the first insulating layer and the second insulating layer, the conductive layer is arranged on the second insulating layer and connected with the grid electrode, therefore, when the thin film resistor is in the opening state, opening-state currents formed in a conductive channel of the semiconductor layer are increased, and the closed-state currents of the conductive channel are decreased when the thin film resistor is in the closed state. With the method, the thin film transistor can improve the switch ratio.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a thin film transistor, an array substrate and a display panel. Background technique [0002] The thin film transistor (Thin Film Transistor, TFT) used as a switching element in the display panel is a semiconductor device that uses the gate (Gate) voltage to control the current between the source (Source) and the drain (Drain). Among them, the TFT The structure is: a grid, an insulating layer, a semiconductor layer, a source and a drain are stacked in sequence. The carriers that play a conductive role in the TFT conductive channel (Channel) are electrons. [0003] The working principle of TFT is: when a high voltage is applied to the Gate, the electrons in the area near the Gate side in the semiconductor layer gather, and the electron concentration increases, thereby forming a conductive front conduction channel between the Source and the Drain. The front conduction channel is...

AI Technical Summary

Problems solved by technology

In the off state, the semiconductor layer is far away from the Gate side, that is, near the Source / Drain side, a back conduction channel (Back Channel) for electron accumulation will be formed, resulting in leakage current, which will increase the off-state current of the TFT and reduce the switching ratio (Ion / Ioff)

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