A kind of thin film transistor, array substrate and display panel
A technology of thin-film transistors and array substrates, which is applied in the display field, can solve the problems of lower switching ratio and larger off-state current, and achieve the effects of improving switching ratio, reducing impedance, and reducing leakage current
Active Publication Date: 2016-05-11
TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
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Problems solved by technology
In the off state, the semiconductor layer is far away from the Gate side, that is, near the Source / Drain side, a back conduction channel (BackChannel) for electron accumulation will be formed, resulting in leakage current, which will increase the off-state current of the TFT and reduce the switching ratio (Ion / Ioff )
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[0022] The present invention will be described in detail below in conjunction with the accompanying drawings and embodiments.
[0023] see figure 1 , figure 1 It is a structural schematic diagram of an embodiment of a thin film transistor of the present invention. Such as figure 1 As shown, the thin film transistor 10 of the present invention includes a gate 11 , a first insulating layer 12 , a semiconductor layer 13 , a source 14 , a drain 15 , a second insulating layer 16 and a conductive layer 17 . Wherein, the first insulating layer 12 is disposed on the gate 11 . The second insulating layer 16 is disposed over the first insulating layer 12 . The semiconductor layer 13 , the source electrode 14 and the drain electrode 15 are disposed between the first insulating layer 12 and the second insulating layer 16 . The conductive layer 17 is arranged on the second insulating layer 16, and is electrically connected with the gate 11, so that the thin film transistor 10 increase...
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A thin film transistor (10), an array substrate and a display panel. The thin film transistor comprises a gate electrode (11, 41), a first insulation layer (12, 42), a second insulation layer (16, 46), a semiconductor layer (13, 43), a source electrode (14, 44), a drain electrode (15, 45) and a conductive layer (17, 47). The first insulation layer is provided on the gate electrode, the second insulation layer is provided above the first insulation layer, the semiconductor layer, source electrode and drain electrode are provided between the first insulation layer and the second insulation layer, and the conductive layer is provided on the second insulation layer and is electrically conducted with the gate electrode so that when the thin film transistor is in an open state, an ON-state current formed in a conductive channel of the semiconductor layer is increased, and when the thin film transistor is in a closed state, an OFF-state current in the conductive channel is reduced. In the above-mentioned manner, the ON / OFF ratio can be increased.
Description
technical field [0001] The invention relates to the field of display technology, in particular to a thin film transistor, an array substrate and a display panel. Background technique [0002] The thin film transistor (ThinFilmTransistor, TFT) used as a switching element in the display panel is a semiconductor device that uses the gate (Gate) voltage to control the current between the source (Source) and the drain (Drain), wherein the structure of the TFT is : A gate, an insulating layer, a semiconductor layer, a source and a drain are sequentially stacked. The carriers that play a conductive role in the TFT conductive channel (Channel) are electrons. [0003] The working principle of TFT is: when a high voltage is applied to the Gate, the electrons in the area near the Gate side in the semiconductor layer gather, and the electron concentration increases, thereby forming a conductive front conduction channel between the Source and the Drain. The front conduction channel is ...
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IPC IPC(8): H01L29/786H01L27/12G02F1/1368
CPCH01L29/458H01L29/78618H01L29/78648H01L27/12H01L29/786H01L29/78606G02F1/13H01L27/088
Inventor 杜鹏陈政鸿
Owner TCL CHINA STAR OPTOELECTRONICS TECH CO LTD