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A technology of light-emitting diodes and electrodes, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of inability to emit light, affecting the light output rate of semiconductor structures, etc.
Active Publication Date: 2016-12-14
TSINGHUA UNIV +1
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Problems solved by technology
However, the near-field evanescent light waves from the active layer are unable to exit due to rapid attenuation in the process of radiating outwards, so they are confined inside the semiconductor structure and are completely absorbed by the materials in the semiconductor structure, which affects the light output of the semiconductor structure. Rate
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Embodiment Construction
[0054] Embodiments and specific embodiments of the semiconductor structure, the light emitting diode and the manufacturing method thereof provided by the present invention will be described in detail below with reference to the accompanying drawings.
[0055] see figure 1 , the first embodiment of the present invention provides a semiconductor structure 10, which includes a substrate 110, a buffer layer 116, a first semiconductor layer 120, an active layer 130, a second semiconductor layer 140, a third optically symmetrical layer 150 , a metal layer 160 , a fourth optically symmetrical layer 170 , a first optically symmetrical layer 180 and a second optically symmetrical layer 190 . The buffer layer 116, the first semiconductor layer 120, the active layer 130, the second semiconductor layer 140, the third optically symmetrical layer 150, the metal layer 160, the fourth optically symmetrical layer 170, the first optically symmetrical layer 180 and the second optically The symm...
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The invention relates to a light emitting diode, which comprises: a substrate; an active layer, the active layer includes a first semiconductor layer, an active layer and a second semiconductor layer; a first electrode and the first semiconductor Layers are electrically connected; a second electrode is electrically connected to the second semiconductor layer; further comprising a third optically symmetrical layer disposed on the surface of the second semiconductor layer away from the substrate and in contact with it; a metal layer is disposed on the first semiconductor layer Three optically symmetrical layers are arranged away from the surface of the substrate and contacted; a fourth optically symmetrical layer is arranged on the surface of the metal layer away from the substrate and arranged in contact; a first optically symmetrical layer is arranged on the surface of the fourth optically symmetrical layer away from the substrate and a second optically symmetrical layer is disposed on the surface of the first optically symmetrical layer away from the substrate.
Description
technical field [0001] The invention relates to a light emitting diode. Background technique [0002] High-efficiency blue, green, and white light-emitting diodes made of gallium nitride semiconductor materials have remarkable features such as long life, energy saving, and environmental protection. They have been widely used in large-screen color displays, automotive lighting, traffic signals, multimedia displays, and optical communications. And other fields, especially in the field of lighting has broad development potential. [0003] A traditional light-emitting diode usually includes a substrate, an N-type semiconductor layer, a P-type semiconductor layer, an active layer arranged between the N-type semiconductor layer and the P-type semiconductor layer, and a P-type electrode (usually transparent electrode) and the N-type electrode disposed on the N-type semiconductor layer. The N-type semiconductor layer, the active layer and the P-type semiconductor layer are sequent...
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IPC IPC(8): H01L33/06H01L33/02H01L33/22
CPCH01L33/22H01L33/44H01L2933/0091H01L33/36
Inventor 张淏酥朱钧李群庆金国藩范守善
Owner TSINGHUA UNIV