Test method for vertical double-diffused metal-oxide-semiconductor field-effect transistors

Abstract

The invention discloses a method for measuring a vertical double-diffusion MOSFET. The method includes the step 1, applying measuring voltage to the transistor and injecting sampling current to the drain electrode of the transistor to obtain first voltage between the drain electrode of the transistor and the source electrode of the transistor, step 2, injecting measuring current and heating the transistor under given measuring time, step 3, injecting the sampling current to obtain second voltage between the drain electrode of the transistor and the source electrode of the transistor, and step 4, computing a different value between the first voltage and the second voltage and computing the heat resistance of the transistor according to the different value between the first voltage and the second voltage. Measurement and evaluation on the performance of the VDMOSFET can be carried out by measuring the voltage change quantity between the drain electrode and the source electrode of the VDMOSFET under working states. The measuring method can meet use demands and evaluate and judge the whole performance of the VDMOSFET more comprehensively and more effectively.

Description

technical field [0001] The invention relates to the technical field of electronic device testing, in particular to a testing method for a vertical double-diffused metal oxide semiconductor field effect transistor. Background technique [0002] With the increasing specifications and types of vertical double-diffused metal-oxide-semiconductor field-effect transistors (referred to as VDMOSFET), the use is becoming more and more extensive, the circuit design is becoming more and more complex, and the quality and performance requirements of VDMOSFET are also increasing. more stringent. In this complicated development process, on the basis of partially retaining some concepts of the original VDMOSFET characteristic analysis and judgment, some new judgment methods, as well as new concepts and indicators will be introduced. [0003] It is generally considered that in different application requirements, the reverse breakdown voltage, threshold voltage, and on-state resistance RDON o...

AI Technical Summary

Problems solved by technology

[0004] The current test method is the inherent test method of VDMOSFET. The test conditions and scope are summarized for almost all conventional VDMOSFETs, but the performance or excellent degree of VDMOSFET has not been measured and evaluated.

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