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Composite semi-conductor bridge

A semiconductor and polymer technology, used in weapon accessories, blasting cylinders, offensive equipment, etc., can solve the problems of inapplicability, low accuracy of firing time, and difficult to control the time of hot steam evaporation process, and improve the firing speed. , the effect of improving the control accuracy

Inactive Publication Date: 2014-01-15
CHENGDU HONGSHAN TECH
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  • Summary
  • Abstract
  • Description
  • Claims
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AI Technical Summary

Problems solved by technology

Using the existing semiconductor bridge ignition, because the control of the time of the hot steam evaporation process is not easy to grasp, the control effect is that the accuracy of the ignition time is not high, and it is not suitable for occasions with high control accuracy

Method used

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  • Composite semi-conductor bridge
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Embodiment

[0022] Such as figure 1 A compound semiconductor bridge shown, it comprises a semiconductor layer 3 and a metal bottom layer 4 deposited on the semiconductor layer 3, a first electrode 5 and a second electrode 6 are deposited on the metal bottom layer 4, the metal A pyrophoric substance is deposited on the bottom layer 4, and the pyrophoric substance includes a metal layer and a metal oxide layer, and the metal layer and the metal oxide layer have at least two layers respectively, and the metal layer and the metal oxide layer are deposited alternately. The invention adopts a new structure, does not need to put explosives in the semiconductor bridge, and directly uses the characteristics of the semiconductor to quickly ignite the pyrophoric substance; the pyrophoric substance adopts a composite method of cross-deposition of metal layers and metal oxide layers, which can effectively improve the pyrotechnic material. The temperature rise rate can improve the control accuracy of ...

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Abstract

The invention discloses a composite semi-conductor bridge which comprises a semi-conductor layer and a metal bottom layer deposited on the semi-conductor layer, wherein a first electrode and a second electrode are deposited on the metal bottom layer; an igniting substance is deposited on the metal bottom layer and comprises at least two metal layers and at least two metal oxide layers, and the metal layers and the metal oxide layers are deposited in a cross manner. The composite semi-conductor bridge has the advantages that a new structure is adopted, the igniting substance adopts a composite structure, and the control accuracy is high.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a composite semiconductor bridge used for ignition of artillery ammunition and the like. Background technique [0002] The semiconductor bridge is a micro-device structure that utilizes the conductive function of the semiconductor to make the semiconductor and the pyrogenic material on it release energy rapidly and generate high temperature and heat after electrification. The structure of the existing semiconductor bridge is as figure 2 As shown, the number 9 is a silicon substrate or a sapphire substrate, and the number 8 is a silicon coating. The semiconductor bridge contains explosives, and the bridge wire device is implanted in a silicon substrate or a cerulean substrate, which has high thermal conductivity. When a low current passes through the bridge wire, its heat is absorbed by the substrate. When a high current passes through it, because the bridge wire is small, it is q...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): F42B3/13
Inventor 黄友华
Owner CHENGDU HONGSHAN TECH
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