Unlock instant, AI-driven research and patent intelligence for your innovation.

Manufacturing method of semiconductor device and semiconductor device

A manufacturing method and semiconductor technology, which are applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve problems such as deterioration and deformation of connectors, and achieve the effect of good connectivity

Active Publication Date: 2017-05-24
RESONAC CORPORATION
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Conventional anisotropic conductive adhesives have often used heat-curable adhesives using thermal latent polymerization initiators, epoxy resins, and (meth)acrylic monomers. Lead to deterioration and deformation of the connected body

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Manufacturing method of semiconductor device and semiconductor device
  • Manufacturing method of semiconductor device and semiconductor device
  • Manufacturing method of semiconductor device and semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] Hereinafter, a method of manufacturing a semiconductor device and embodiments of the semiconductor device will be described in detail with reference to the drawings.

[0023] figure 1 It is a schematic diagram showing the manufacturing method of the semiconductor device of one embodiment. Such as figure 1 As shown, the manufacturing method of this semiconductor device has the following connection process: the semiconductor element 11 is placed on the light-transmitting substrate 13 placed on the stage 2 through the photocurable adhesive layer 12, and the connection process is performed by using the thermocompression joint 3. The semiconductor element 11 is connected to the light-transmitting substrate 13 by heating and pressing and light irradiation by the light irradiation devices 4 a and 4 b. Such a connection step is realized by the thermocompression bonding device 1 having the stage 2, the thermocompression joint 3, and the light irradiation devices 4a, 4b.

[00...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

A method for manufacturing a semiconductor device includes a connection process for arranging a semiconductor device having a width of 1 mm or less mounted on a stage by forming a bonding layer of a light hardening property in a light transmission substrate and connecting the semiconductor device to the light transmission substrate by using a light radiation device for light radiation and a pressure head for pressure. In the connection process, the bonding layer is hardened by reflecting light from the light radiation device to both sides of the semiconductor device in a longitudinal direction.

Description

technical field [0001] The present invention relates to a method of manufacturing a semiconductor device and the semiconductor device. Background technique [0002] In recent years, with the miniaturization, thinning, and high-definition of electronic components such as semiconductor integrated circuits and displays, anisotropic conductive adhesives have attracted attention as connecting materials for high-density connection of electronic components and circuit systems . Conventional anisotropic conductive adhesives have often used heat-curable adhesives using thermal latent polymerization initiators, epoxy resins, and (meth)acrylic monomers. Lead to deterioration and deformation of the connected body. On the other hand, in the case of using a photolatent polymerization initiator, it has been studied that connection at a relatively low temperature can be performed by performing light irradiation during thermocompression bonding. [0003] In the method of manufacturing a s...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02C09J7/00
CPCH01L24/27H01L24/83H01L24/94H01L2224/27H01L2224/83203H01L2224/8322H01L2224/94H01L2924/07811H01L2924/15787H01L2924/15788H01L2924/00
Inventor 川上晋有福征宏
Owner RESONAC CORPORATION