Semiconductor detection structure and detection method

Abstract

Provided are a semiconductor detection structure and method. The semiconductor detection structure comprises a semiconductor substrate, an N-type doped region and a P-type doped region which are located in the semiconductor substrate, an interlayer dielectric layer located on the surface of the semiconductor substrate, and an interconnection structure to be detected and an auxiliary interconnection structure which are located in the interlayer dielectric layer and electrically isolated from each other. A depletion region is arranged between the N-type doped region and the P-type doped region. The interconnection structure to be detected is electrically connected with the P-type doped region, and the auxiliary interconnection structure is electrically connected with the N-type doped region. The interconnection structure to be detected and the auxiliary interconnection structure at least comprise two interlayer metal layers and electric conduction plugs located between the adjacent interlayer metal layers respectively, and the number of the interlayer metal layers of the interconnection structure to be detected and the auxiliary interconnection structure is equal. Whether the interconnection structure to be detected has flaws due to light-induced electrochemical corrosion can be judged simply and conveniently by detecting the resistances of the different interlayer metal layers.

Description

technical field [0001] The invention relates to the field of semiconductor testing, in particular to a semiconductor testing structure and testing method for testing photoelectrochemical corrosion. Background technique [0002] With the advancement of semiconductor technology, the size of integrated circuit devices becomes smaller and smaller. When the integration of integrated circuits increases, the surface of the chip cannot provide enough area to make the required interconnection lines. Therefore, most of the current VLSI structures use a multi-layer stacked metal interconnection structure. In the multi-layer stacked metal interconnection structure, each layer of metal interconnection layer includes several metal interconnection lines, and the metal interconnection lines in the same layer are separated by dielectric materials, and the metal interconnection lines in different layers The wires are also separated by dielectric materials, and the metal interconnection wires...

AI Technical Summary

Problems solved by technology

However, as the size of the metal interconnection line becomes smaller and smaller, the metal interconnection structure is more and more susceptible to damage such as electro-migration (Electro-Migration), stress migration (StressMigration), photo-induced copper corrosion (PhotoAssistantCopperCorrosion, PACC) influence, the metal interconnection structure is prone to open circuit or the on-resistance becomes larger

[0003] In order to solve the above problems, the industry has adopted a variety of detection structures and detection methods to detect the interconnection performance of the metal interconnection structure, but most of the detection structures in the prior art are to detect the effects of electromigration and stress migration on the metal interconnection structure. For example, the US Patent No. US6747445B2 discloses a detection method and detection structure for detecting the stress migration of the metal interconnection structure, but there is no detection method for the photoinduced copper corrosion of the metal interconnection structure. Detection method and detection structure

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