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Integrated circuit with circuit damage protection mechanism and method thereof

An integrated circuit and protection mechanism technology, applied in emergency protection circuit devices, electrical components, etc., can solve problems such as excessive current protection circuit misoperation, incorrect shutdown of power transistors, voltage surges, etc.

Active Publication Date: 2016-12-21
ELITE SEMICON MEMORY TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, due to the reverse recovery characteristics of the parasitic body diode of the power transistor, a voltage spike will appear on the power transistor during the reverse recovery period.
In addition, some other factors, such as current bouncing, charge injection or noise interference, may also cause voltage surges
Such voltage surges may cause the overcurrent protection circuit to malfunction and incorrectly turn off the power transistor

Method used

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  • Integrated circuit with circuit damage protection mechanism and method thereof
  • Integrated circuit with circuit damage protection mechanism and method thereof
  • Integrated circuit with circuit damage protection mechanism and method thereof

Examples

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Embodiment Construction

[0021] figure 1 is a schematic diagram of an integrated circuit 10 with a circuit damage protection mechanism according to an embodiment of the present invention. In this embodiment, the integrated circuit 10 with circuit damage protection mechanism includes a comparator 11 , a first resistor 12 and a high-pass filter circuit 15 . One end of the first resistor 12 is coupled to a reference potential VREF, and the other end is coupled to a first node A with a first input end of the comparator 11 . One end of the high-pass filter circuit 15 is coupled to the first node A, and the other end is coupled to a second node B with a second input end of the comparator 11 and a voltage signal end 13 .

[0022] refer to figure 1 , in this embodiment, the high-pass filter circuit 15 is composed of a capacitor 153 . One end of the capacitor 153 is coupled to the first node A, and the other end is coupled to the second node B. When a voltage signal generated by an over-current event occur...

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Abstract

An integrated circuit with circuit damage protection mechanism includes a comparator, a first resistor and a high-pass filter circuit. One end of the first resistor is coupled to a reference potential, and the other end is coupled to a first node with a first input end of the comparator. One end of the high-pass filter circuit is coupled to the first node, and the other end is coupled to a second node with a second input end and a voltage signal end of the comparator. Wherein, when an overcurrent event occurs at the voltage signal terminal, the comparator is configured to output an overcurrent protection signal. In addition, when a surge current event occurs at the voltage signal terminal, the comparator will not output the overcurrent protection signal.

Description

technical field [0001] The invention relates to an integrated circuit with circuit damage protection mechanism and its method. Background technique [0002] DC-to-DC voltage converters, such as low dropout linear regulators (Low Dropout Linear Regulator, LDO) or switching regulators (Switching Regulator), are used to convert an input voltage to a stable output voltage to provide load current . Generally, the known DC-DC voltage converter includes a protection circuit, such as an overcurrent protection circuit, to protect a circuit system including the known DC-DC voltage converter under abnormal operation conditions. The known overcurrent protection circuit usually includes an overcurrent sensing circuit and an overcurrent control circuit. When the overcurrent sensing circuit senses a load current greater than a critical current, the overcurrent control circuit turns off a power transistor connected between the input terminal and the output terminal of the voltage converte...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H02H7/12
Inventor 贺仲达
Owner ELITE SEMICON MEMORY TECH INC