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Thermal interface materials and methods for processing the same

A thermal interface material, heat transfer surface technology, applied in heat transfer modification, heat exchange equipment, lighting and heating equipment, etc., can solve problems such as the operation of devices that affect the operating characteristics of electrical components

Inactive Publication Date: 2014-01-29
TIANJIN LAIRD TECH LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Such excessive temperatures can adversely affect the operating characteristics of electrical components and the operation of associated devices

Method used

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  • Thermal interface materials and methods for processing the same
  • Thermal interface materials and methods for processing the same
  • Thermal interface materials and methods for processing the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0065] In this example, four samples of thermal transfer putty (a silicone gap filler product) were used to evaluate the presence of entrapped gas. The thermally conductive putty has a thermal conductivity of about 3 watts / meter-Kelvin (W / mK) and a density of about 2.4 grams per cubic centimeter (g / cc).

[0066]The first sample consisted of a monolithic ball of thermally conductive putty exposed to ambient laboratory conditions for about 24 hours. The sample was then immersed in degassed liquid silicone in a clear glass jar, and the jar was placed in a vacuum chamber (with a clear window for viewing the sample). An increasing vacuum was drawn on the interior of the vacuum chamber, resulting in a final low pressure of about 127 Torr (about 5 inHg abs) in the chamber (the chamber yielded a gauge reading of about -25 inHg). The samples were kept at this low pressure in the chamber for about 1 hour, after which the following observations were made. Bubbles began to form on the s...

Embodiment 2

[0071] In this example, thermal cycle analysis was performed on two thermal transfer putty samples (silicone thermal gap filler products). The heat transfer putty has a thermal conductivity of about 3 W / mK and a density of about 1.5 g / cc.

[0072] A first sample of the thermal putty was placed in a container and subjected to reduced pressure. Specifically, the gas was removed from the container (to remove all the samples from the sample in the container) by applying a vacuum of about 381 Torr (about 15 inHg abs) to the container and thermal putty for about 5 minutes (to allow the first sample to be vacuum conditioned). Entrained gas). The second sample of thermal putty was not subjected to reduced pressure (so it was not vacuum conditioned). Thermal cycling analysis was then immediately performed on the first and second samples. Each sample was placed between a pair of glass plates so that the effect of thermal cycling analysis could be easily observed. A spacer separates ...

Embodiment 3

[0074] In this example, thermal cycle analysis was performed on two thermal transfer putty samples (silicone thermal gap filler products). The thermally conductive putty had a thermal conductivity of about 2 W / mK and a density of about 3.0 g / cc.

[0075] A first sample of the thermal putty was placed in a container and subjected to reduced pressure. In particular, the gas was removed from the container (to remove the entrained sample from the sample in the container) by applying a vacuum of about 381 Torr (about 15 inHg abs) to the container and sample for about 5 minutes (to allow the first sample to be vacuum conditioned). gas). The second sample of thermal putty was not subjected to reduced pressure (so it was not vacuum conditioned). Thermal cycling analysis was then immediately performed on the first and second samples. Each sample was placed between a pair of glass plates so that the effect of thermal cycling analysis could be easily observed. A spacer separates each...

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Abstract

A thermal interface material is provided for use to fill a gap between surfaces in a thermal transfer system to transfer heat between the surfaces. The thermal interface material includes a base material and thermally conductive particles dispersed within the base material. The thermal interface material is conditioned under reduced pressure (e.g., prior to being placed in the gap between the surfaces, while being placed in the gap, after being placed in the gap, etc.) and, within about forty-eight hours or less of conditioning, the conditioned thermal interface material is either positioned in a container that inhibits ambient gas from contacting it (either alone or applied to the surfaces), or used to transfer heat between the surfaces. As such, the thermal interface material is substantially free of cracks following exposure to thermal cycling comprising a temperature change of at least about 100 degrees Celsius for at least about 10 cycles.

Description

[0001] Cross References to Related Applications [0002] This application claims priority to US Patent Application Serial No. 13 / 111,735, filed May 19, 2011. The entire content of the above application is incorporated herein by reference. technical field [0003] The present disclosure generally relates to thermal interface materials and methods of processing the same. Background technique [0004] This section provides background information related to the present disclosure which is not necessarily prior art. [0005] Electrical components (eg, semiconductors, integrated circuit housings, transistors, etc.) typically have pre-designed temperatures at which the electrical components operate optimally. Ideally, the pre-design temperature is close to the temperature of the ambient air. However, the operation of electrical components generates heat. If this heat is not removed, electrical components may operate at temperatures significantly higher than their normal or expe...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/31
CPCF28F2013/006F28F2255/00F28F13/00H01L23/3737H01L23/42H01L2924/0002H01L2924/00H01L21/31
Inventor 卡伦·J·布鲁兹达理查德·F·希尔布莱恩·琼斯迈克尔·D·克雷格
Owner TIANJIN LAIRD TECH LTD