Method for determining flash memory and its reference unit
A technology of reference unit and storage unit, which is applied in the field of integrated circuits and can solve problems such as reference current drift
Active Publication Date: 2016-12-21
GIGADEVICE SEMICON (BEIJING) INC
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Problems solved by technology
[0005] The main purpose of the present invention is to provide a method for determining a flash memory and its reference unit, so as to solve the problem that the flash memory is prone to reference current drift in the prior art
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[0021] It should be noted that, in the case of no conflict, the embodiments in the present application and the features in the embodiments can be combined with each other. The present invention will be described in detail below with reference to the accompanying drawings and examples.
[0022] The embodiment of the present invention provides a flash memory, and the flash memory provided by the embodiment of the present invention is specifically introduced as follows:
[0023] figure 2 is a circuit diagram of a flash memory according to an embodiment of the present invention, such as figure 2 As shown, the flash memory of the embodiment of the present invention includes a storage unit C A , reference unit group C R , a first switching unit A, a comparison unit SA and a control unit B.
[0024] Specifically, the reference cell group C R It consists of two or more reference units, the specifications of each reference unit are the same, and each reference unit is in the sam...
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The invention discloses a method for determining a flash memory and a reference unit thereof. Wherein, the flash memory includes: a storage unit; a plurality of reference units; a first switching unit, the first switching unit is connected with a plurality of reference units; a comparison unit, the first input end of the comparison unit is connected with the storage unit, and the comparison The second input terminal of the unit is connected to the first reference unit through the first switching unit; and the control unit is connected to both the first reference unit and the first switching unit, and is used for operating the first reference unit when the number of operating cycles is greater than or When it is equal to the preset number of times, the second input end of the comparison unit is controlled to be disconnected from the first reference unit through the first switching unit, and the second input end of the comparison unit is controlled to be connected to the second reference unit. The present invention solves the problem that the flash memory is prone to reference current drift in the prior art, and further achieves the effect of increasing the reliability of the flash memory under multiple reads and writes.
Description
technical field [0001] The invention relates to the field of integrated circuits, in particular to a method for determining a flash memory and a reference unit thereof. Background technique [0002] With the development of the consumer electronics market, flash memory, as the main memory, has been widely used in mobile phones, digital cameras and other products, and the market scale is constantly expanding. The flash memory can keep the stored information for a long time without power on, and the schematic diagram of its read operation is as follows figure 1 shown in memory cell C A (Array Cell) and reference cell C R A certain voltage is applied to the gate of (Ref Cell), and the current Ic and Iref are read from the drain, and the two are compared with each other. If Ic>Iref, SA outputs logic 1; if Ic<Iref, SA outputs logic 0 , so as to achieve the purpose of reading out the stored data. [0003] During the working process of the flash memory, it needs a stable r...
Claims
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IPC IPC(8): G11C16/06
Inventor 胡洪王林凯
Owner GIGADEVICE SEMICON (BEIJING) INC