Capacitor topological structure and integrated circuit

Abstract

The invention provides a capacitor topological structure and an integrated circuit. The capacitor topological structure comprises a plurality of capacitor units. Each capacitor unit comprises MIM capacitors which are located in the center and of a regular N-side polygon shape, and a side wall capacitor around the MIM capacitors of the regular N-side polygon shape. The side wall capacitor comprises a plurality of first metal layers with the center hollowed out, wherein hollowed-out portions are matched with the MIM capacitors of the regular N-side polygon shape in shape, the multiple first metal layers are connected through a first via hole. The MIM capacitors of the regular N-side polygon shape and the side wall capacitor around the MIM capacitors are adopted, the environments of all the sides of the MIM capacitors of the regular N-side polygon shape are consistent, and under the condition that the landscape area of the integrated circuit is unchanged, the matching degree of the MIM capacitors can be improved, the landscape area can be saved, and compactness can be improved.

Description

technical field [0001] The invention relates to the technical field of integrated circuit layout, in particular to a capacitor topological structure and an integrated circuit. Background technique [0002] One of the main factors restricting the accuracy of analog / mixed-signal integrated circuits is the matching accuracy of devices. In analog / mixed-signal integrated circuits based on switched capacitor technology, capacitors are the main mismatching devices. In order to improve the accuracy of the circuit, MIM capacitors with a higher degree of matching have become the first choice. Although the minimum unit MIM capacitor has reached a matching accuracy of about 0.1% with the continuous reduction of process feature size and the continuous improvement of related manufacturing processes, in order to meet the requirements of higher precision, capacitors with large capacitance are often required. Further improve the matching accuracy. [0003] For the MIM capacitor itself, the...

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Problems solved by technology

[0004] Since the MIM capacitor has a square structure, it cannot overcome the adverse effects of the surrounding environment such as devices and wiring on the matching degree. Therefore, in order to increase the matching degree, it is necessary to increase the capacitance or the area of ​​the layout, which will lead to an increase in the layout area. , or even increase power consumption; in addition, increasing the matching degree by increasing the layout area or increasing the capacitance will intensify the adverse effects brought by various gradients inside the chip, and even partially offset the positive effects brought about by increasing the area

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