Multiple-grid transistor and manufacturing method thereof

Abstract

The invention provides a multiple-grid transistor and a manufacturing method thereof. The transistor comprises a semiconductor substrate, a W-shaped groove, a semiconductor bridge, an oxide layer and a conducting layer. The W-shaped groove is formed in part of the semiconductor substrate and extends in a first direction. The semiconductor bridge extends in a second direction perpendicular to the first direction on the semiconductor substrate. The semiconductor bridge stretches across part of the W-shaped groove and is connected with the semiconductor substrate. The semiconductor bridge is provided with a flat top face and an arc bottom face. The oxide layer partially surrounds the flat top face of the semiconductor bridge and part of the arc bottom face. The conducting layer extends in the first direction and is formed on the semiconductor substrate and the oxide layer. The conducting layer surrounds the oxide layer and is partially filled into the W-shaped groove. According to the multiple-grid transistor and the manufacturing method thereof, combining of a channel and a grid electrode is improved, control of the grid electrode over channel potential energy is enhanced, short-channel effect restraining is facilitated, and miniature metal oxide semiconductor transistor performance is facilitated.

Description

technical field [0001] The present invention relates to semiconductor manufacturing, and in particular to a multi-gate transistor and a manufacturing method thereof. Background technique [0002] In the manufacture of ultra-large-scale integrated (ULSI) circuits, the manufacturing technology of metal-oxide semiconductor field effect transistors (MOSFETs) plays a decisive role. For more than ten years, the speed performance, circuit density and unit cost of devices have been improved by reducing the size of MOSFETs. However, when the gate length of the traditional bulk MOSFET is reduced, the source / drain will easily interact with the channel region to affect the potential energy therein. As such, transistors with shorter gate lengths may encounter problems such as being unable to control the channel switching state of the gate. [0003] The phenomenon of reduced gate-channel control capability of transistors with short gate lengths will lead to short-channel effects. Howev...

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Problems solved by technology

However, when the gate length of the traditional bulk MOSFET is reduced, the source / drain will easily interact with the channel region and affect the potential energy in it.

Thus, transistors with shorter gate lengths may suffer from problems such as inability to control the channel switching state of the gate

[0003] The phenomenon of reduced gate-channel control ability of transistors with short gate length will lead to short-channel effect

However, increasing the doping concentration of the body, reducing the thickness of the gate oxide layer, and ultra-shallow source / drain junctions to reduce the short-channel effect are no longer satisfactory for traditional device structures such as using bulk silicon substrates.

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