A Wide Cell Insulated Gate Bipolar Transistor

Abstract

The present invention relates to semiconductor technology, in particular to an insulated gate bipolar transistor suitable for pulse power applications. A wide cellular insulated gate bipolar transistor of the present invention has a cellular structure comprising an anode structure consisting of an anode 9 and an anode region 5, an N-type drift region 4 located on the anode region 5, and an N-type drift region 4 located on the anode region 5. The gate 7 and the cathode 8 on the top, the N-type drift region 4 is provided with a P-type base region 3, and the P-type base region 3 is provided with an N-type source region 1 and a P-type cathode region 2, which is characterized in that , the width of the N-type source region 1 is 50-200 μm, and the doping concentration of the P-type base region 3 is 1×1013-8×1013 cm-2. The invention has the beneficial effects of providing a WC-IGBT device with high peak current capability and high current growth capability, and solving the problem that the IGBT cannot be well adapted to the application field of pulse power. The invention is particularly applicable to insulated gate bipolar transistors for pulsed power applications.

Description

technical field [0001] The present invention relates to semiconductor technology, in particular to an insulated gate bipolar transistor suitable for pulse power applications. Background technique [0002] Power semiconductor devices, as switching devices, can be applied in both the power electronics field and the pulse power field. In the field of power electronics, a conventional insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT for short) is widely used as a switching device because of its superior performance. In the field of power electronics applications, in order to prevent parasitic thyristor latch-up in IGBT devices, thereby improving the device's forward safe operating area (SOA), the development trend of its device technology is to use smaller line widths to achieve smaller device cells. (Cell) size, while using a lower P-type base doping concentration, etc. At the same time, researchers have also proposed some new device structures and p...

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Problems solved by technology

However, there are some disadvantages in this category: for example, the device is a normally-on device, and a negative voltage needs to be provided to the gate when the device is turned off, which not only increases the complexity of the system, but also brings potential danger to the system safety; at the same time, the device’s The production process of triple diffusion makes its production complicated, high production cost, low yield, etc.

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