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Doping method of Fin FET

A technology of doping layers and doping elements, used in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as poor injection uniformity, improve the phenomenon of rounded corners, and help maintain and reduce wear effect

Active Publication Date: 2016-10-19
KINGSTONE SEMICONDUCTOR LIMITED COMPANY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0013] The technical problem to be solved by the present invention is to overcome the defect that the ion implantation method used in the prior art to complete the doping of Fin has poor implantation uniformity, especially the non-uniformity of the top and side walls of Fin often exceeds 10:1 , to provide a FinFET doping method, achieve implantation saturation through long-term ion implantation, and add an implantation process after the sidewall implantation is completed, through reverse doping and sputtering, and finally achieve uniform doping of Fin miscellaneous

Method used

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  • Doping method of Fin FET
  • Doping method of Fin FET
  • Doping method of Fin FET

Examples

Experimental program
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Effect test

Embodiment 1

[0077] In the FinFET doping method described in this embodiment, the FinFET includes a substrate and Fins arranged in parallel and spaced on the substrate, each Fin includes a top surface, a first sidewall and a second sidewall, the doping method Include the following steps:

[0078] The doped layer of the first conductivity type is formed on the top surface, the first sidewall, and the second sidewall of the Fin. The doped layer can be realized by using an existing process. Due to the vertical structure of the Fin, the first conductivity type in the top surface The doping dose of the doped layer must be greater than the doping dose of the first conductivity type doped layer of the sidewall.

[0079] Implanting the dopant element of the second conductivity type into the top surface of Fin along the normal direction of the substrate to neutralize part of the dopant element of the first conductivity type in the top surface, and sputtering out part of the dopant element of the fi...

Embodiment 2

[0081] In this embodiment, the structure of the FinFET is consistent with Embodiment 1, refer to Figure 5-Figure 7 , the substrate is represented by 100, Fin is represented by 200, and the doping method includes the following steps:

[0082] For each Fin 200:

[0083] refer to Figure 5 , implanting arsenic into the first sidewall and into the top surface until the dose of arsenic in the first sidewall reaches self-saturation, wherein the N-type doped layer on the top surface is denoted by 302, and the sidewall The N-type doped layer is denoted by 301 .

[0084] refer to Figure 6 , arsenic is implanted into the second sidewall and into the top surface until the dose of arsenic element in the second sidewall reaches self-saturation, and the N-type doped layers of the top surface and the sidewall are still in 302 and 301 To represent. In order to form doping in the sidewall, the implantation direction of arsenic element must be at a certain angle to the normal line of the...

Embodiment 3

[0087] The basic principle of embodiment 3 is the same as embodiment 2, the difference is:

[0088] In this embodiment, instead of two implants, multiple implants are used, and the ion implantation of the first side wall and the second side wall is implemented in sequence until the dose of arsenic in the two side walls reaches self-saturation , followed by a vertical normal boron implant.

[0089] Refer to Example 2 for all the other unmentioned parts.

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Abstract

The invention discloses a doping method of a Fin FET. The Fin FET comprises a substrate and fins that are arranged on the substrate in parallel at intervals. Each pin includes a top surface, a first side wall, and a second side wall. The doping method includes: forming first conductive doping layers in the top surfaces, the first side walls, and the second side walls of the fins; and T2, implanting second conductive doping elements into the top surfaces of the fins along a normal direction of the substrate to neutralize the parts of first conductive doping elements in the first conductive doping layers and sputter the parts of first conductive doping elements in the top surfaces out. According to the invention, implantation saturation is realized based on long-time ion implantation and one implantation process is added after implantation on the side walls; and doping conformity of the fins is realized based on inverted doping and sputtering.

Description

technical field [0001] The invention relates to a method for doping a FinFET, in particular to a method for doping a FinFET with a self-adjusting function. Background technique [0002] With the development of integrated circuits from 22nm technology nodes to smaller sizes, the process will adopt FinFET (fin field effect transistor, Fin means fish fin, FinFET is named according to the similarity between the shape of the transistor and the fish fin) structure, aiming to reduce The channel effect has an absolute advantage in suppressing subthreshold current and gate leakage current. With the improvement of integration, it will be an inevitable trend for FinFET devices to replace traditional bulk silicon devices. [0003] figure 1 A part of the FinFET structure (comprising two units 100 and 200) is shown, reference numeral 20 represents a substrate, such as a silicon substrate, and reference numeral 22 represents a shallow trench isolation region formed in or on the substrate...

Claims

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Application Information

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IPC IPC(8): H01L21/336H01L21/265
Inventor 洪俊华吴汉明陈炯张劲
Owner KINGSTONE SEMICONDUCTOR LIMITED COMPANY