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Doping method of finfet

A technology of doping layers and doping elements, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of poor injection uniformity, and achieve the effects of maintaining, uniform doping, and small damage

Active Publication Date: 2021-02-19
北京凯世通半导体有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0013] The technical problem to be solved by the present invention is to overcome the defect that the implantation uniformity is not good when ion implantation is used to complete the doping of Fin in the prior art, especially the defect that the unevenness of the top and sidewall of Fin often exceeds 10:1 , provide a FinFET doping method, realize the saturation of the implantation through a long period of ion implantation, and add a substrate element (such as silicon or germanium) implantation process after the sidewall implantation is completed, and finally achieve uniform doping of Fin miscellaneous

Method used

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  • Doping method of finfet
  • Doping method of finfet
  • Doping method of finfet

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Experimental program
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Embodiment 1

[0080] In the FinFET doping method described in this embodiment, the FinFET includes a substrate and Fins arranged in parallel and spaced on the substrate, each Fin includes a top surface, a first sidewall and a second sidewall, the doping method Include the following steps:

[0081] T1. Form a doped layer on the top surface, first sidewall, and second sidewall of Fin. The doped layer can be realized by using an existing process. Due to the vertical structure of Fin, the doping of the doped layer on the top surface The concentration must be greater than the doping concentration of the doped layer of the sidewall.

[0082] T2. Implanting silicon element into the top surface of the Fin along the normal direction of the substrate to reduce the concentration of doping elements in the top surface. Wherein, the implantation depth of the silicon element is consistent with the depth of the doped layer, which can effectively reduce the concentration of the doped element in the top sur...

Embodiment 2

[0084] In this embodiment, the structure of the FinFET is consistent with Embodiment 1, refer to Figure 5-Figure 7 , the substrate is represented by 100, Fin is represented by 200, and the doping method includes the following steps:

[0085] For each Fin 200:

[0086] refer to Figure 5 , inject doping elements into the first sidewall and into the top surface until the dose of doping elements in the first sidewall reaches self-saturation, wherein the doping layer on the top surface is denoted by 302 , and the doping element on the sidewall The doped layer is indicated at 301 .

[0087] refer to Figure 6 , so that doping elements are implanted into the second sidewall and into the top surface until the dose of the doping element in the second sidewall reaches self-saturation, and the doping layers of the top surface and the sidewall are still in 302 and 301 To represent. In order to form doping in the sidewall, the implantation direction of the dopant element must be at ...

Embodiment 3

[0090] The basic principle of embodiment 3 is the same as embodiment 2, the difference is:

[0091] In this embodiment, instead of two implants, multiple implants are used, and the ion implantation of the first side wall and the second side wall is implemented in sequence until the dose of the doping element in the two side walls reaches the self-implantation level. Saturation, then perform a vertical silicon implant.

[0092] Refer to Example 2 for all the other unmentioned parts.

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Abstract

A method for doping a FinFET, the FinFET includes a substrate (20) and Fins (200) arranged in parallel and at intervals on the substrate, each Fin includes a top surface, a first side wall and a second side wall, the doping The method includes the following steps: T1, forming a doped layer on the top surface, the first sidewall and the second sidewall of the Fin; T2, implanting substrate elements into the Fin along the normal direction of the substrate (20) In order to reduce the concentration of doping elements in the top surface. The saturation of the implantation is achieved through a longer period of ion implantation, and a substrate element implantation process is added after the sidewall implantation is completed, so as to finally achieve uniform doping of Fin.

Description

technical field [0001] The invention relates to a method for doping a FinFET, in particular to a method for doping a FinFET with a self-adjusting function. Background technique [0002] With the development of integrated circuits from 22nm technology nodes to smaller sizes, the process will adopt FinFET (fin field effect transistor, Fin means fish fin, FinFET is named according to the similarity between the shape of the transistor and the fish fin) structure, aiming to reduce The channel effect has an absolute advantage in suppressing subthreshold current and gate leakage current. With the improvement of integration, it will be an inevitable trend for FinFET devices to replace traditional bulk silicon devices. [0003] figure 1 A part of the FinFET structure (comprising two units 100 and 200) is shown, reference numeral 20 represents a substrate, such as a silicon substrate, and reference numeral 22 represents a shallow trench isolation region formed in or on the substrate...

Claims

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Application Information

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IPC IPC(8): H01L21/336
CPCH01L29/66803H01L21/3215H01L29/6656
Inventor 洪俊华吴汉明陈炯张劲
Owner 北京凯世通半导体有限公司