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TVS device and manufacturing method

A manufacturing method and device technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as signal attenuation

Active Publication Date: 2014-02-12
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The size of the capacitor is proportional to the current carrying capacity of the TVS, too large a capacitor will attenuate the signal

Method used

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  • TVS device and manufacturing method
  • TVS device and manufacturing method

Examples

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Embodiment Construction

[0039] The structure of the TVS device of the present invention is as Figure 9 As shown, there is a heavily doped P-type buried layer on the P-type low-resistance substrate, and there are three isolation regions on the P-type buried layer, which isolate the first isolation well and the second isolation well.

[0040] In the first isolation well, there are heavily doped N-type buried layers from bottom to top, the N-type buried layer is in contact with the P-type buried layer on the P-type substrate, and above the N-type buried layer is an N-type buried layer. The epitaxial layer, the N-type epitaxial layer is in the shape of a convex shape with a thin top and a thick bottom, and the two shoulders are two grooves, and the two grooves are filled with intrinsic polysilicon and heavily doped P-type polysilicon from bottom to top. lead out the buried electrode.

[0041] In the second isolation well, there is a P-type epitaxial layer from bottom to top, the P-type epitaxial layer ...

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Abstract

The invention discloses a TVS device. Channels are etched in epitaxial layers and are filled with intrinsic polycrystalline silicon and heavily doped polycrystalline silicon so as to extract an electrode, the width of a depletion region is increased, and the capacitance is decreased. The invention further discloses a manufacturing method of the TVS device.

Description

technical field [0001] The present invention relates to a semiconductor device, in particular to a TVS device, and also relates to a manufacturing process method of the TVS device. Background technique [0002] Transient interference of voltage and current is the main cause of damage to electronic circuits and equipment, and often brings incalculable losses to people. These disturbances usually come from the start-stop operation of power equipment, the instability of the AC power grid, lightning strike interference and electrostatic discharge, etc. The emergence of a high-efficiency circuit protection device TVS has effectively suppressed transient interference. TVS (Transient Voltage Suppressor) or transient voltage suppressor diode is a new product developed on the basis of Zener technology. Both TVS and Zener voltage regulator can be used for voltage regulation, but the breakdown current of Zener is higher. Small, the regulated voltage greater than 10V is only 1mA, rela...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/861H01L29/06H01L21/329
CPCH01L29/0603H01L29/66128H01L29/8611
Inventor 石晶钱文生刘冬华胡君段文婷
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP