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A kind of igbt device and manufacturing method thereof

A device and semiconductor technology, which is applied in the field of insulated gate bipolar transistor devices and its manufacturing, can solve the problems of limiting IGBT performance, IGBT avalanche current and voltage characteristics, and IGBT’s limited withstand voltage capability, so as to improve reliability and reverse Effects of breakdown voltage and stability improvement

Active Publication Date: 2019-06-14
GPOWER SEMICON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although, as the thickness of the n-type drift layer increases, the width of the depletion region in the n-type drift layer will further increase, but when the width of the depletion region reaches the upper limit, it will no longer increase with the thickness of the n-type drift layer. while increasing
At the same time, the vertical electric field strength away from the p-n junction interface is gradually weakening, so the withstand voltage capability of the vertical structure IGBT in the prior art is still limited
At the same time, due to the existence of holes in the p-type current blocking layer and the increase of hole concentration under high voltage, it is easy to cause IGBT to have avalanche or sudden change of current and voltage characteristics in advance, resulting in poor reliability of IGBT
On the other hand, due to the theoretical limit of silicon semiconductor materials, the further improvement of IGBT performance is constantly being restricted

Method used

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  • A kind of igbt device and manufacturing method thereof
  • A kind of igbt device and manufacturing method thereof
  • A kind of igbt device and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0048] Embodiment 1, with reference to Figure 1A-Figure 1G shown

[0049] The manufacturing method of the IGBT provided in this embodiment, such as Figure 1A As shown, firstly, step S1 is performed to sequentially grow a drift layer 102 , a current blocking layer 103 , and a semiconductor channel layer 104 on a substrate 101 . Wherein, the bottom layer is the substrate 101, and the substrate 101 can be formed by heavily doped B or implantation process. In this embodiment, the substrate 101 is a heavily doped p+GaN semiconductor layer. In other embodiments, the substrate 101 can also be other heavily doped semiconductor materials; further, the drift layer 102 can be a lightly doped n-GaN layer; the current blocking layer 103 can be a p-GaN layer; the semiconductor channel layer 104 can be a heavily doped n+GaN layer. A drift layer 102 is grown on the substrate 101. In this embodiment, the drift layer 102 is a lightly doped n-GaN semiconductor layer. The current blocking la...

Embodiment 2

[0063] Embodiment 2, with reference to figure 2 shown

[0064] figure 2 It is a schematic diagram of a modified structure of Embodiment 1 of the present invention. like figure 2 As shown, on the basis of Embodiment 1, a two-dimensional electron gas re-growth layer 180 is formed in the semiconductor channel layer 104 between the emitter electrodes 105 and the gate trench 120 by material growth equipment. The two-dimensional electron gas regrowth layer 180 includes an electron transport semiconductor layer 106 and an electron supply semiconductor layer 107 located on the electron transport semiconductor layer 106, forming a two-dimensional Electron Gas108. The two-dimensional electron gas 108 is formed in the electron transport semiconductor layer 106 at the interface between the electron supply semiconductor layer 107 and the electron transport semiconductor layer 106 due to the polarization effect. In other embodiments of the present invention, the electron supply semi...

Embodiment 3

[0068] Embodiment 3, with reference to image 3 shown

[0069] The IGBT device 100 obtained through the above design can basically meet the requirements of use, but for the purpose of further improving its functions, the designer has made further improvements to the IGBT device 100 .

[0070] In this embodiment, on the basis of the device structure in Embodiment 2, a buffer layer 160 is formed before growing the drift layer 102 on the substrate 101, and then the drift layer 102 is formed on the buffer layer 160. The subsequent steps are the same as in Embodiment 2. same. That is to say, in the IGBT device structure of the second embodiment, the buffer layer 160 is inserted between the drift layer 102 and the substrate 101 to form a punch-through (PT) IGBT structure 200 . In other preferred embodiments of the present invention, the buffer layer is a heavily doped n+GaN layer. Since the heavily doped n+GaN layer is heavily doped or injected with electrons, the forward conduct...

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Abstract

An IGBT (Insulated Gate Bipolar Transistor) device comprises a substrate, a drift layer, a current blocking layer, a semiconductor channel layer, P+ wells, emission electrodes, P- type electrodes, a gate pole groove, a gate pole electrode and a collector electrode, wherein the drift layer, the current blocking layer and the semiconductor channel layer are formed on the substrate, the P+ wells are arranged in the drift layer, the emission electrodes are formed on the semiconductor channel layer, the P- type electrodes are formed between the emission electrodes and the current blocking layer, the emission electrodes have the same potentials with the P+ wells or are electrically connected with the P+ wells, the gate pole groove is formed in the semiconductor channel layer and the current blocking layer between the emission electrodes, the gate pole electrode is formed in the gate pole groove, and the collector electrode is arranged on a back surface of the substrate. With the design of the P+ wells, the leakage current of the device is reduced, and the breakdown voltage of the device is increased; and the with the design of the P- type electrodes, the stability of electrical characteristic of the device is improved, and the reliability of the device is improved.

Description

technical field [0001] The invention relates to the technical field of transistors, in particular to an insulated gate bipolar transistor (insulated gate bipolar transistor, IGBT) device and a manufacturing method thereof. Background technique [0002] At present, the IGBT combines the high input impedance of the metal-oxide-semiconductor field-effect transistor (MOSFET) and the low turn-on voltage drop of the bipolar junction transistor (BJT). The advantages. It has occupied a place in the fields of high-voltage and high-power conversion systems such as AC motors, frequency converters, switching power supplies, lighting circuits, and traction drives, and has gradually become the mainstream device in this application field. [0003] The on-resistance of the transistor device determines the conduction loss of the system application process. When the on-resistance of the device is small, the conduction loss of its application is small, which can improve the efficiency of the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/739H01L29/06H01L21/331
CPCH01L29/0623H01L29/6631H01L29/66348H01L29/7397
Inventor 赵树峰裴轶
Owner GPOWER SEMICON
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