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sno 2 Self-driven ultraviolet photodetector based on homojunction and its preparation method

A photodetector and homojunction technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of slow response speed and high dark current, and achieve the effects of low dark current, fast response speed, and good rectification characteristics

Active Publication Date: 2021-10-22
HUBEI UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In view of this, the present invention proposes a kind of SnO 2 Homojunction-based self-driven ultraviolet photodetector and its preparation method to solve the technical problems of slow response speed and high dark current in the prior art

Method used

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  • sno <sub>2</sub> Self-driven ultraviolet photodetector based on homojunction and its preparation method
  • sno <sub>2</sub> Self-driven ultraviolet photodetector based on homojunction and its preparation method
  • sno <sub>2</sub> Self-driven ultraviolet photodetector based on homojunction and its preparation method

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Embodiment 1

[0050] like figure 1 As shown, the present invention provides a SnO 2 Homojunction-based self-driven UV photodetectors, including:

[0051] substrate1;

[0052] n-NbSnO 2 Thin film layer 2, located on the surface of substrate 1;

[0053] Mg-doped p-type conductive MgSnO 2 Thin film layer 3, on n-NbSnO 2 The surface of the thin film layer 2 away from the substrate, Mg-doped p-type conductive MgSnO 2 Thin film layer 3 on n-NbSnO 2 The orthographic projection of the surface of thin film layer 2 does not completely cover n-NbSnO 2 film layer 2;

[0054] The first metal electrode layer 4 is located on Mg-doped p-type conductive MgSnO 2 The surface of the film layer 3 away from the substrate 1 side;

[0055] The second metal electrode layer 5 is located on n-NbSnO 2 The thin film layer 2 is away from the substrate 1 and is not Mg-doped with p-type conductive MgSnO 2 Surface covered with film layer 3 .

[0056] It should be noted that, in the embodiment of the present ap...

Embodiment 2

[0072] like image 3 As shown, the present invention provides a SnO 2 Self-driven UV photodetectors based on homogeneous pn junctions, including:

[0073] substrate1;

[0074] n-NbSnO 2 Thin film layer 2, located on the surface of substrate 1;

[0075] n-SnO 2 Thin film layer 6, located on NbSnO 2 The surface of the thin film layer 2 away from the substrate 1 side, n-SnO 2 Thin film layer 6 on n-NbSnO 2 The orthographic projection of the surface of thin film layer 6 does not completely cover n-NbSnO 2 film layer 6;

[0076] Mg-doped p-type conductive MgSnO 2 Thin film layer 3, on the n-SnO 2 The surface of the film layer 6 away from the substrate 1 side;

[0077] The first metal electrode layer 4 is located on Mg-doped p-type conductive MgSnO 2 The surface of the film layer 3 away from the substrate 1 side;

[0078] The second metal electrode layer 5 is located on n-NbSnO 2 The thin film layer 2 is away from the substrate 1 side and is not covered by n-SnO 2 The...

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Abstract

The invention provides a SnO 2 A self-driven ultraviolet photodetector based on a homojunction and a preparation method thereof, the photodetector comprising: a substrate; n-NbSnO 2 Thin film layer on the substrate surface; Mg-doped p-type conductive MgSnO 2 Thin film layer on n‑NbSnO 2 Thin film layer away from the substrate side, Mg-doped p-type conductive MgSnO 2 Thin film layer on n‑NbSnO 2 The orthographic projection of the surface of the thin film layer does not fully cover n‑NbSnO 2 Thin film layer; the first metal electrode layer, located in the Mg-doped p-type conductive MgSnO 2 The surface of the thin film layer away from the substrate; the second metal electrode layer on n-NbSnO 2 The thin film layer is away from the substrate side and is not Mg-doped p-type conductive MgSnO 2 Film layer covering. The photodetector of the present invention has high repeatability and stability, extremely low dark current, extremely low power consumption and extremely fast response speed, and can work by self-driving under zero bias voltage.

Description

technical field [0001] The invention relates to ultraviolet light photodetectors, in particular to a SnO 2 A self-driven ultraviolet photodetector based on a homojunction and a preparation method thereof. Background technique [0002] SnO 2 As a typical direct bandgap wide bandgap semiconductor material, its bandgap width reaches 3.6 eV, so it has high transmittance to visible light, and compared with some other wide bandgap semiconductor materials, SnO 2 It has many advantages such as more stable physical and chemical properties, higher mechanical strength and greater electron mobility, and has great application potential in the field of ultraviolet optoelectronics. In recent years, in the field of ultraviolet detection, based on SnO 2 The MSM type ultraviolet detection device was successfully prepared. However, based on SnO 2 The MSM-type photodetector usually has a slow photoresponse speed, has a serious continuous photoconductive effect, and needs to work under the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0352H01L31/103H01L31/032H01L31/18
CPCH01L31/032H01L31/0324H01L31/0325H01L31/035272H01L31/103H01L31/18Y02P70/50
Inventor 何云斌黎明锴刘伯涵付旺叶盼肖兴林魏浩然尹魏玲卢寅梅常钢
Owner HUBEI UNIV
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