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Multi-junction germanium-based long-wave infrared detector and preparation method thereof

A long-wave infrared and detector technology, used in electrical radiation detectors, radiation pyrometry, instruments, etc., can solve problems such as the difficulty of widening, and achieve low preparation cost, large depletion zone width, and good detection performance. Effect

Pending Publication Date: 2021-11-30
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The width of the depletion region is mainly determined by the doping concentration, operating voltage and barrier region width, and it is very difficult to widen

Method used

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  • Multi-junction germanium-based long-wave infrared detector and preparation method thereof
  • Multi-junction germanium-based long-wave infrared detector and preparation method thereof
  • Multi-junction germanium-based long-wave infrared detector and preparation method thereof

Examples

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Effect test

example 1

[0029] Select the high-resistance Ge substrate 1, and the doping concentration is 1×10 13 cm -3 , making two absorption region patterns on the surface of the Ge substrate 1 by means of ultraviolet lithography technology, the width of a single absorption region is 50 μm, and the thickness of the photoresist used is about 3 μm, which can be used as a masking agent for the subsequent ion implantation process;

[0030] Through multiple ion implantation processes, implant B impurities into the absorption region 3, the implantation depth is about 1 μm, and the doping concentration is about 4×10 16 cm -3 ;

[0031] Fabricate an electrode area pattern on the surface of the Ge substrate 1 by means of ultraviolet lithography again, and the width of the electrode area is 100 μm;

[0032] Through multiple ion implantation processes again, implant B impurities into the electrode region 2, the implantation depth is about 1 μm, and the doping concentration is about 3×10 18 cm -3 ;

[0...

example 2

[0037] Select the high-resistance Ge substrate 1, and the doping concentration is 1×10 13 cm -3 , making five absorption region patterns on the surface of Ge substrate 1 by means of ultraviolet lithography technology, the width of a single absorption region is 20 μm, and the thickness of the photoresist used is about 3 μm, which can be used as a masking agent for the subsequent ion implantation process;

[0038] Through multiple ion implantation processes, implant B impurities into the absorption region 3, the implantation depth is about 1 μm, and the doping concentration is about 5×10 16 cm -3 ;

[0039] Fabricate an electrode area pattern on the surface of the Ge substrate 1 by means of ultraviolet lithography again, and the width of the electrode area is 100 μm;

[0040] Through multiple ion implantation processes again, implant B impurities into the electrode region 2, the implantation depth is about 1 μm, and the doping concentration is about 3×10 18 cm -3 ;

[0041...

example 3

[0045] Select the high-resistance Ge substrate 1, and the doping concentration is 1×10 13 cm -3 , making ten absorption region patterns on the surface of the Ge substrate 1 by means of ultraviolet lithography technology, the width of each absorption region is 10 μm, and the thickness of the photoresist used is about 3 μm, which can be used as a masking agent for the subsequent ion implantation process;

[0046] Through multiple ion implantation processes, implant B impurities into the absorption region 3, the implantation depth is about 1 μm, and the doping concentration is about 2×10 16 cm -3 ;

[0047] Fabricate an electrode region pattern on the surface of the Ge substrate 1 again by means of ultraviolet lithography technology, and the width of the electrode region is 100 μm;

[0048] Through multiple ion implantation processes again, implant B impurities into the electrode region 2, the implantation depth is about 1 μm, and the doping concentration is about 3×10 18 cm ...

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Abstract

The invention discloses a multi-junction germanium-based long-wave infrared detector and a preparation method thereof. The detector is composed of a germanium substrate, an electrode region, an absorption region, a blocking region, a lead electrode and a passivation layer. The preparation method comprises four steps. According to the method, an absorption region, an electrode region, a passivation layer and a lead electrode are sequentially formed on a high-resistance germanium substrate through photoetching, ion implantation, rapid annealing, thin film deposition, dry etching and other processes. According to the prepared long-wave infrared detector, a plurality of absorption regions and blocking regions are introduced on the basis of a traditional impurity band blocking detector structure, so that a plurality of depletion regions are obtained, the width of the depletion regions is increased, the effective light absorption region of the device is increased, and the response rate and the detection rate of the detector are improved. The preparation method is compatible with the current semiconductor process technology, and the research and development and production cost is low.

Description

technical field [0001] The invention relates to a long-wave infrared detector and a preparation method thereof. The multi-junction germanium-based long-wave infrared detector is especially suitable for the field of mid- and far-infrared astronomical detection in the range of 40-200 μm. Background technique [0002] Infrared astronomy is an important branch of astronomy, and the key to the development of infrared astronomy is the development of infrared detectors. Common infrared detectors can be made of materials such as mercury cadmium telluride, indium antimonide, and indium gallium arsenide. They all use the properties of semiconductor materials to absorb infrared light, so the absorbed photon energy needs to be larger than the forbidden band width of semiconductor materials. Larger and shorter detectable wavelengths. [0003] The blocking impurity band detector introduces impurity energy levels by doping semiconductor materials, and uses the impurity energy levels to ab...

Claims

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Application Information

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IPC IPC(8): H01L31/0352H01L31/101H01L31/18G01J5/20
CPCH01L31/0352H01L31/101H01L31/1808G01J5/20G01J2005/204Y02P70/50
Inventor 潘昌翊邓惠勇牟浩殷子薇汪越窦伟张祎姚晓梅戴宁
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI