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Crystalline silicon solar cell and manufacturing method thereof

A technology of a solar cell and a manufacturing method, applied in the field of solar cells, can solve problems such as low light absorption rate, and achieve the effect of avoiding absorption

Active Publication Date: 2016-08-17
YINGLI GRP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The present invention aims to provide a crystalline silicon solar cell and a manufacturing method thereof to solve the problem of low light absorption rate of crystalline silicon solar cells in the prior art

Method used

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  • Crystalline silicon solar cell and manufacturing method thereof

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Experimental program
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Effect test

Embodiment 1

[0035] The above-mentioned silicon nitride film structure was fabricated by the plate PECVD model of Roth&Rau XL, and the microwave power of the tubular PECVD was set to 3000W, the temperature was 350°C, and the air pressure was 0.27mbar. The substrate is placed in the above-mentioned plate-type PECVD reaction chamber with the back facing up, and the first reaction gas with a flow ratio of SiH4 and NH3 of 1:1 is introduced into the PECVD reaction chamber through the first quartz tube, and the first silicon nitride film is formed after about 2 minutes ; Use the second quartz tube to feed SiH into the PECVD reaction chamber 4 and NH 3 The second reaction gas with a flow ratio of 1:2 forms the second silicon nitride film after about 2 minutes; uses the third quartz tube to feed SiH into the PECVD reaction chamber 4 and NH 3 The third reaction gas with a flow ratio of 1:4 will form the third silicon nitride film after about 2 minutes; use the fourth quartz tube to feed the fourt...

Embodiment 2

[0038] The above-mentioned silicon nitride film structure is produced by using the tubular PECVD model of Jiejiachuang PD-380. The RF power of the tubular PECVD is set to 6000W, the temperature is 430°C, and the air pressure is 1600mTorr. The specific process is: the anti-reflection layer will be completed The silicon substrate after deposition is placed in the above-mentioned tubular PECVD reaction chamber with the back facing up, and SiH is introduced into the PECVD reaction chamber. 4 and NH 3 The first reaction gas with a flow ratio of 1:1 forms the first silicon nitride film after about 1 minute; the second reaction gas with a flow ratio of SiH4 and NH3 of 1:3 is introduced into the PECVD reaction chamber, and the second silicon nitride film is formed after about 1 minute. Silicon nitride film; SiH is introduced into the PECVD reaction chamber 4 and NH 3 The third reaction gas with a flow ratio of 1:6 forms the third silicon nitride film after about 1 minute; the fourth...

Embodiment 3

[0041] The above-mentioned silicon nitride film structure is produced by using the tubular PECVD model of CentrothermE200-410-4. The discharge power of the tubular PECVD is set to 6000W, the temperature is 450°C, and the air pressure is 1500mTorr. The specific process is: the deposition of the anti-reflection layer will be completed Afterwards, the silicon substrate is placed in the above-mentioned tubular PECVD reaction chamber with the back facing up, and SiH is introduced into the PECVD reaction chamber. 4 and NH 3 The flow ratio of the first reaction gas is 1:1, and the first silicon nitride film is formed after about 2 minutes; SiH is introduced into the PECVD reaction chamber 4 and NH 3 The second reaction gas with a flow ratio of 1:3 forms the second silicon nitride film after about 2 minutes; SiH is introduced into the PECVD reaction chamber 4 and NH 3 The third reaction gas with a flow ratio of 1:6, and the third silicon nitride film is formed after about 2 minutes...

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Abstract

The invention provides a crystal silicon solar cell and a manufacturing method thereof. The crystal silicon solar cell comprises a silicon substrate and a silicon nitride film structure arranged on the back face of the silicon substrate. The silicon nitride film structure comprises at least two layers of silicon nitride films, and the refractive indexes of the silicon nitride films sequentially become smaller in the direction far away from the silicon substrate. Due to the fact that the refractive indexes of the silicon nitride films sequentially become smaller in the direction far away from the silicon substrate, the refractive indexes of the adjacent silicon nitride films are different, a light ray not absorbed by the silicon substrate can be refracted or reflected when passing the interface of the adjacent silicon nitride films and then returns to the silicon substrate to be absorbed by the silicon substrate, and the occurrence of the light ray loss caused by the fact that the light ray directly penetrates through the silicon nitride films is avoided. Meanwhile, a technician in the field can control the refractive indexes of the different silicon nitride films within the reasonable range, and the occurrence that excessive high-refractive-index silicon nitride films absorb overmuch light is avoided.

Description

technical field [0001] The invention relates to the field of solar cells, in particular to a crystalline silicon solar cell and a manufacturing method thereof. Background technique [0002] In solar cell research, how to increase the incidence of sunlight and the transmission distance in the silicon substrate is one of the important directions. In the conventional P-type solar crystalline silicon cell process, most of the optimization of optical performance is concentrated on On the front side of the battery, one of the solutions is to reduce the reflectivity of the silicon wafer surface and increase the passivation effect of the surface. At present, commercial solar cells have also made appropriate improvements to the back of the silicon wafer, such as figure 1 As shown, PECVD is used to deposit a layer of silicon nitride film structure 2 on the back of silicon substrate 1, because the silicon nitride is rich in H + The bond is represented by SiNX:H, and the silicon nitri...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0216H01L31/18
CPCH01L31/02327H01L31/1804Y02E10/547Y02P70/50
Inventor 徐卓杨学良杨德成胡志岩熊景峰
Owner YINGLI GRP