Multiple quantum well structure of high-brightness LED

A multi-quantum well structure and light-emitting diode technology, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of limited overall efficiency improvement potential, no overall consideration of stress release electron hole injection rate balance, etc., to achieve concentration distribution Improve compound position, increase compound efficiency, and improve overall performance
CN103594573AInactive Publication Date: 2014-02-19西安利科光电科技有限公司
6 Cites 5 Cited by

Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
西安利科光电科技有限公司
Publication Date
2014-02-19
Estimated Expiration
Not applicable · inactive patent

Smart Images

  • Figure 1
    Figure 1
Patent Text Reader

Abstract

The invention provides a multiple quantum well structure of a high-brightness LED to improve the whole performance of devices. The multiple quantum well structure comprises four multiple quantum well layers, the forbidden bandwidth of quantum wells in the first multiple quantum well layer is smallest, the forbidden bandwidth of quantum wells in the second multiple quantum well layer is largest, and the forbidden bandwidth of quantum wells in the third multiple quantum well layer and the forbidden bandwidth of quantum wells in the fourth multiple quantum well layer are between the forbidden bandwidth of the quantum wells in the first multiple quantum well layer and the forbidden bandwidth of the quantum wells in the second multiple quantum well layer. The forbidden bandwidth of quantum bases in the fourth multiple quantum well layer is smaller than the forbidden bandwidths of quantum bases of other multiple quantum well layers and larger than the forbidden bandwidth of the quantum wells of the fourth multiple quantum well layer. The multiple quantum well structure of the high-brightness LED obviously improves the optimized results of all the aspects such as the injection efficiency of an electron hole, the migration rate, concentration distribution and the composite position, and therefore the whole performance of the devices is greatly improved.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention belongs to the field of optoelectronic device design, and in particular relates to a multi-quantum well structure design of a light-emitting diode. Background technique

[0002] At present, the quantum well structure part of the light emitting diode structure is mainly a multi-quantum well structure design, but the balance problem of electrons and holes is not well solved in various multi-quantum well structure designs. In the current light-emitting diode structure, the electron concentration in the N layer is much higher than the hole concentration in the P layer, and the migration speed of the electrons is much higher than that of the holes. In this way, the traditional structure design will cause the holes and electrons to be in the quantum gap. The concentration distribution in the well structure is uneven, causing the holes to be mainly concentrated in the quantum wells near the P layer, while the hole concentration in the quantum we...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More