Multiple quantum well structure of high-brightness LED

A multi-quantum well structure and light-emitting diode technology, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of limited overall efficiency improvement potential, no overall consideration of stress release electron hole injection rate balance, etc., to achieve concentration distribution Improve compound position, increase compound efficiency, and improve overall performance

Inactive Publication Date: 2014-02-19
西安利科光电科技有限公司
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  • Summary
  • Abstract
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  • Claims
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Problems solved by technology

[0004] However, the current LED structure only considers the influence of a single factor on the structure, and does not consider factors such as stress release, electron...

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  • Multiple quantum well structure of high-brightness LED

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Embodiment 1

[0026] The multi-quantum well structure sequentially includes a first multi-quantum well layer, a second multi-quantum well layer, a third multi-quantum well layer and a fourth multi-quantum well layer. Wherein the first multi-quantum well layer is close to the side of the N-type layer, and the fourth multi-quantum well is close to the side of the P-type layer; the quantum well band gap of the first multi-quantum well layer is the smallest, and the quantum well of the second multi-quantum well layer is forbidden. The band width is the largest, the quantum well band gap of the third and the fourth multi-quantum well layer is between the quantum well band gap of the first multi-quantum well layer and the second multi-quantum well layer; the quantum barrier of the fourth multi-quantum well layer The bandgap width is smaller than the quantum barrier bandgap width of other multi-quantum well layers but larger than the quantum well bandgap width of the fourth quantum well layer; the ...

Embodiment 2

[0029] The multi-quantum well structure sequentially includes a first multi-quantum well layer, a second multi-quantum well layer, a third multi-quantum well layer and a fourth multi-quantum well layer. Wherein the first multi-quantum well layer is close to the side of the N-type layer, and the fourth multi-quantum well is close to the side of the P-type layer; the quantum well band gap of the first multi-quantum well layer is the smallest, and the quantum well of the second multi-quantum well layer is forbidden. The band width is the largest, the quantum well band gap of the third and the fourth multi-quantum well layer is between the quantum well band gap of the first multi-quantum well layer and the second multi-quantum well layer; the quantum barrier of the fourth multi-quantum well layer The band gap is smaller than the quantum barrier band gap of other multi-quantum well layers but larger than the quantum well band gap of the fourth quantum well layer; the number of layer...

Embodiment 3

[0032] The multi-quantum well structure sequentially includes a first multi-quantum well layer, a second multi-quantum well layer, a third multi-quantum well layer and a fourth multi-quantum well layer. Wherein the first multi-quantum well layer is close to the side of the N-type layer, and the fourth multi-quantum well is close to the side of the P-type layer; the quantum well band gap of the first multi-quantum well layer is the smallest, and the quantum well of the second multi-quantum well layer is forbidden. The band width is the largest, the quantum well band gap of the third and the fourth multi-quantum well layer is between the quantum well band gap of the first multi-quantum well layer and the second multi-quantum well layer; the quantum barrier of the fourth multi-quantum well layer The band gap is smaller than the quantum barrier band gap of other multi-quantum well layers but larger than the quantum well band gap of the fourth quantum well layer; the number of layer...

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Abstract

The invention provides a multiple quantum well structure of a high-brightness LED to improve the whole performance of devices. The multiple quantum well structure comprises four multiple quantum well layers, the forbidden bandwidth of quantum wells in the first multiple quantum well layer is smallest, the forbidden bandwidth of quantum wells in the second multiple quantum well layer is largest, and the forbidden bandwidth of quantum wells in the third multiple quantum well layer and the forbidden bandwidth of quantum wells in the fourth multiple quantum well layer are between the forbidden bandwidth of the quantum wells in the first multiple quantum well layer and the forbidden bandwidth of the quantum wells in the second multiple quantum well layer. The forbidden bandwidth of quantum bases in the fourth multiple quantum well layer is smaller than the forbidden bandwidths of quantum bases of other multiple quantum well layers and larger than the forbidden bandwidth of the quantum wells of the fourth multiple quantum well layer. The multiple quantum well structure of the high-brightness LED obviously improves the optimized results of all the aspects such as the injection efficiency of an electron hole, the migration rate, concentration distribution and the composite position, and therefore the whole performance of the devices is greatly improved.

Description

technical field [0001] The invention belongs to the field of optoelectronic device design, and in particular relates to a multi-quantum well structure design of a light-emitting diode. Background technique [0002] At present, the quantum well structure part of the light emitting diode structure is mainly a multi-quantum well structure design, but the balance problem of electrons and holes is not well solved in various multi-quantum well structure designs. In the current light-emitting diode structure, the electron concentration in the N layer is much higher than the hole concentration in the P layer, and the migration speed of the electrons is much higher than that of the holes. In this way, the traditional structure design will cause the holes and electrons to be in the quantum gap. The concentration distribution in the well structure is uneven, causing the holes to be mainly concentrated in the quantum wells near the P layer, while the hole concentration in the quantum we...

Claims

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Application Information

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IPC IPC(8): H01L33/04H01L33/06
CPCH01L33/06
Inventor 李淼游桥明沈志强
Owner 西安利科光电科技有限公司
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