The invention provides a
multiple quantum well structure of a high-brightness LED to improve the whole performance of devices. The
multiple quantum well structure comprises four
multiple quantum well
layers, the forbidden bandwidth of
quantum wells in the first multiple
quantum well layer is smallest, the forbidden bandwidth of
quantum wells in the second multiple
quantum well layer is largest, and the forbidden bandwidth of quantum wells in the third multiple
quantum well layer and the forbidden bandwidth of quantum wells in the fourth multiple
quantum well layer are between the forbidden bandwidth of the quantum wells in the first multiple quantum well layer and the forbidden bandwidth of the quantum wells in the second multiple quantum well layer. The forbidden bandwidth of quantum bases in the fourth multiple quantum well layer is smaller than the forbidden bandwidths of quantum bases of other multiple quantum well
layers and larger than the forbidden bandwidth of the quantum wells of the fourth multiple quantum well layer. The multiple quantum well structure of the high-brightness LED obviously improves the optimized results of all the aspects such as the injection efficiency of an
electron hole, the migration rate, concentration distribution and the
composite position, and therefore the whole performance of the devices is greatly improved.