Method for manufacturing flip-chip light emitting diode

Abstract

The invention provides a method for manufacturing a GaN-based flip-chip light emitting diode. The method for manufacturing the GaN-based flip-chip light emitting diode comprises the steps that a bearing substrate (10) is provided, a welded ball and a bump electrode (11) are formed on the bearing substrate (10), and a GaN-based flip-chip light emitting diode structure is provided. According to the GaN-based flip-chip light emitting diode structure, a sapphire substrate (1) is provided, an n type GaN layer (2) is formed on the sapphire substrate (1), an active layer (3) is formed on the n type GaN layer (2) , a p type GaN layer (4) is formed on the active layer (3), an n type electrode (9) and a p type electrode (8) are formed on the p type GaN layer (4), an isolating groove is formed between the n type electrode (9) and the p type electrode (8), an insulating layer (6) is formed on the side wall of the isolating groove, a copper cylinder (5) which is electrically connected with the n type electrode (9) is formed in the isolating groove, and the welded ball and a bump electrode (11) on the bearing substrate (10) are made to be electrically connected with the n type electrode (9) and the p type electrode (8). According to the GaN-based flip-chip light emitting diode manufactured with the method, the luminous efficiency can be greatly improved, and the yield of products can be greatly increased.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for manufacturing a GaN-based flip-chip light-emitting diode. Background technique [0002] The advantages of semiconductor light-emitting diodes are high luminous intensity, strong light directivity, low energy consumption, low manufacturing cost, etc., so their applications are becoming more and more extensive, especially in the trend of replacing incandescent and fluorescent lamps in lighting. The advantages of flip-chip light emitting diodes are excellent heat dissipation characteristics and high luminous efficiency. And in recent years, in order to improve the brightness of light-emitting diodes, light-emitting diodes with a vertical structure have been developed. Compared with light-emitting diodes with a front-mounted structure, that is, a mesa structure, the light-emitting diodes with a vertical structure have many advantages. The two electrodes of the ve...

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Problems solved by technology

[0004] However, the problem with the platform structure flip-chip light-emitting diode is that the p-type electrode and the n-type electrode are not on the same plane due to the height difference between the platform structures, so the p-type electrode and the n-type electrode are designed asymmetrically. It is likely to cause soldering failure between the above two electrodes and the corresponding solder balls or bump electrodes on the carrier substrate in the subsequent soldering process, thereby affecting product yield and electrical characteristics

And there are differences in the area and shape of the electrodes, which will cause the LED chip to tilt during the welding process, resulting in a decrease in product yield

Another problem with flip-chip GaN-based light-emitting diodes with a platform structure is that the light reflectivity cannot be significantly improved, even if the n-type electrode and the p-type electrode are formed as electrodes with high reflection function and light reflection is further formed on the carrier substrate. structure, the light reflectivity cannot be improved due to the loose bonding defect between the platform structure flip-chip GaN-based light-emitting diode and the carrier substrate, thereby reducing the luminous efficiency of the light-emitting diode

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