Resistive random access memory(RRAM) with self-rectification characteristic and preparation method thereof

A resistive variable memory and self-rectification technology, applied in the direction of electrical components, etc., can solve the problems of limiting three-dimensional storage applications, and achieve the effects of suppressing read crosstalk, increasing integration density, and simple structure

Active Publication Date: 2014-03-12
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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However, most of the self-rectifying resistive switching devices reported so far use highly doped ...

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  • Resistive random access memory(RRAM) with self-rectification characteristic and preparation method thereof
  • Resistive random access memory(RRAM) with self-rectification characteristic and preparation method thereof
  • Resistive random access memory(RRAM) with self-rectification characteristic and preparation method thereof

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Embodiment Construction

[0032] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0033] The invention is described more fully hereinafter in reference to the examples illustrated in the illustrations, providing preferred embodiments but should not be considered limited to the embodiments set forth herein. In the drawings, the thicknesses of layers and regions are exaggerated for clarity, but as schematic diagrams, they should not be considered as strictly reflecting the proportional relationship of geometric dimensions. The drawings referenced herein are schematic illustrations of idealized embodiments of the invention, and the illustrated embodiments of the invention should not be considered limited to the particular shapes of the regions shown in the drawings, but include the resulting shapes, the re...

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Abstract

The invention discloses a resistive random access memory (RRAM) with self-rectification characteristic and a preparation method thereof, and belongs to the micro-electronics manufacturing and memory technical field. The RRAM with the self-rectification characteristic comprises an upper electrode, a lower electrode, a resistance change material layer and an amorphous silicon layer; the RRAM has ambipolar conversion characteristics, and presents positive and negative non-symmetrical rectification characteristics under low resistance state. The RRAM with self-rectification characteristic is used as a storage unit, so no gating transistor and diode are depended; self-rectification characteristic is employed to realize self selection function; the RRAM is simple in structure, easy to be integrated, high in density and low in cost, and can prevent read crosstalk phenomenon in an intersect array composition. The one time programmable memory based on the RRAM is integrated by employing the intersect array composition, preparation temperature is low, thereby realizing three dimensional stack composition with high density.

Description

technical field [0001] The invention belongs to the field of microelectronics manufacturing and memory technology, in particular to a resistive variable memory with self-rectification characteristics and a preparation method thereof. Background technique [0002] Memory occupies an important position in the semiconductor market and can generally be divided into volatile memory and non-volatile memory. Volatile memory means that the information in the memory must be kept when power is turned on, and the stored information will be lost when it is not powered on; the main feature of non-volatile memory is that it can be stored for a long time without power on. Information. With the continuous popularization of portable electronic devices, the share of non-volatile memory in the entire memory market is also increasing. Currently, the mainstream of the non-volatile memory market is Flash, which accounts for 90% of the market share. However, due to the requirement of storing cha...

Claims

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Application Information

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IPC IPC(8): H01L45/00
Inventor 吕杭炳刘明刘琦李颖弢龙世兵
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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