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Plasma etching method and silicon shallow trench isolation method

A plasma and shallow trench technology, applied in the field of plasma etching method and silicon shallow trench isolation, can solve problems such as negative charge accumulation, and achieve the effects of reducing sputtering, reducing the number, and eliminating defects

Active Publication Date: 2014-03-26
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0012] However, when implementing the above-mentioned curing step and glue removal step, because the diffusion speed of electrons in the plasma is greater than that of ions, negative charges are accumulated on the dielectric window, so that the dielectric window is at a negative potential relative to the plasma

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  • Plasma etching method and silicon shallow trench isolation method
  • Plasma etching method and silicon shallow trench isolation method
  • Plasma etching method and silicon shallow trench isolation method

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Embodiment Construction

[0037] In order to enable those skilled in the art to better understand the technical solution of the present invention, the plasma etching method and the silicon shallow trench etching method provided by the present invention will be described in detail below with reference to the accompanying drawings.

[0038] The plasma etching method provided in this embodiment is based on the following plasma etching equipment, such as figure 1 As shown, the plasma etching equipment includes a reaction chamber 1, a quartz window 2 is arranged on the top of the reaction chamber, and a radio frequency power supply 5 arranged outside the reaction chamber 1 transmits radio frequency energy into the reaction chamber 1 through the quartz window 2 , so as to excite the process gas in the reaction chamber 1 to generate plasma. A lower electrode 3 for carrying a wafer 4 is provided at the bottom of the reaction chamber 1 , and the lower electrode 3 is connected to a power source 6 .

[0039] In ...

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Abstract

The invention provides a plasma etching method and a silicon shallow trench isolation method. Plasma equipment based on the plasma etching method comprises a reaction cavity, a lower electrode and a radio frequency power supply, wherein a dielectric window is formed at the top of the reaction cavity; the radio frequency power supply applies radio frequency energy into the reaction cavity through the dielectric window; the lower electrode for supporting a processing piece is arranged at the bottom in the reaction cavity and is opposite to the dielectric window; power is applied to the lower electrode to enable the potential of the lower electrode to be lower than that of the dielectric window. According to the plasma etching method, the number of defects on the surface of a wafer can be reduced.

Description

technical field [0001] The invention belongs to the technical field of microelectronic processing, and in particular relates to a plasma etching method and a silicon shallow trench isolation method. Background technique [0002] Plasma etching technology is a common technical method for processing semiconductor devices such as chips. Its basic principle is to use radio frequency power to transmit radio frequency energy into the reaction chamber to excite the process gas in the reaction chamber into plasma, and then use the plasma to Process semiconductor devices for processing. [0003] Currently, RF energy is transmitted into the reaction chamber through a dielectric window placed on the top of the reaction chamber. During plasma etching, part of the etching products may be deposited on the walls of the reaction chamber including the dielectric window. When the thickness of the etching product accumulates to a certain thickness, the etching product will fall off the wall ...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/32H01L21/762
Inventor 邢涛
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD