Method for improving surface damage of SOI (Silicon-On-Insulator) substrate

A substrate surface and substrate technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as abnormal gate oxide growth, large fluctuations in circuit well resistance, and reduce substrate surface damage

Active Publication Date: 2014-03-26
WUXI ZHONGWEI JINGYUAN ELECTRONIC CO LTD
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the actual process, the one-time cleaning process and one-time furnace tube annealing process cannot reduce the surface damage of the substrate very well, and it is easy to cause large fluctuations in the well resistance of the circuit and abnormal growth of gate oxide, which has a certain negative impact on the reliability of the circuit. influences

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for improving surface damage of SOI (Silicon-On-Insulator) substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0015] Embodiment 1: a method for improving SOI substrate surface damage, comprising the following process steps:

[0016] (1) Sacrificial oxidation: such as figure 1 As shown, the surface of the SOI substrate 1 is thermally oxidized to form a masking oxide layer 2 at a temperature of 850° C. for 30 minutes, and the thickness of the masking oxide layer is 15 nm;

[0017] (2) Reinforcement implantation: implant element Ar into the masking oxide layer, the implantation energy is 200 keV, and the implantation dose is 1×10 15 ;

[0018] (3) Cleaning: The SOI substrate was cleaned with conventional 3# and 1# cleaning solutions respectively. The cleaning temperature of 3# cleaning solution was 100 °C for 10 minutes, and the cleaning temperature of 1# cleaning solution was 70 °C. The cleaning time is 10 minutes; 3# cleaning liquid is made of H 2 SO 4 and H 2 o 2 It is obtained by mixing at a mass ratio of 3:1, and the 1# cleaning solution is made of NH 3 h 2 O, H 2 o 2 and ...

Embodiment 2

[0022] Embodiment two: a kind of method for improving SOI substrate surface damage, comprises following process step:

[0023] (1) Sacrificial oxidation: such as figure 1 As shown, the masking oxide layer 2 is formed by thermal oxidation on the upper surface of the SOI substrate 1 at a temperature of 840° C. for 31 minutes, and the thickness of the masking oxide layer is 14 nm;

[0024] (2) Reinforcement implantation: implant element Ar into the masking oxide layer, the implantation energy is 198 keV, and the implantation dose is 0.95×10 15 ;

[0025] (3) Cleaning: The SOI substrate was cleaned with conventional 3# and 1# cleaning solutions respectively. The cleaning temperature of 3# cleaning solution was 98 ° C for 11 minutes, and the cleaning temperature of 1 # cleaning solution was 68 ° C. The cleaning time is 11 minutes; 3# cleaning solution is made of H 2 SO 4 and H 2 o 2 It is obtained by mixing at a mass ratio of 3:1, and the 1# cleaning solution is made of NH 3...

Embodiment 3

[0029] Embodiment three: a method for improving SOI substrate surface damage, comprising the following process steps:

[0030] (1) Sacrificial oxidation: such as figure 1 As shown, the masking oxide layer 2 is formed by thermal oxidation on the upper surface of the SOI substrate 1 at a temperature of 860° C. for 29 minutes, and the thickness of the masking oxide layer is 16 nm;

[0031] (2) Reinforcement implantation: implant element Ar into the masking oxide layer, the implantation energy is 202 keV, and the implantation dose is 1.05×10 15 ;

[0032] (3) Cleaning: The SOI substrate was cleaned with conventional 3# and 1# cleaning solutions respectively. The cleaning temperature of 3# cleaning solution was 102 °C for 9 minutes, and the cleaning temperature of 1# cleaning solution was 72 °C. The cleaning time is 9 minutes; 3# cleaning liquid is made of H 2 SO 4 and H 2 o 2 It is obtained by mixing at a mass ratio of 3:1, and the 1# cleaning solution is made of NH 3 h 2 ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention relates to a method for improving surface damage of an SOI (Silicon-On-Insulator) substrate. The method is characterized by comprising the following steps: (1) carrying out thermal oxidation on the upper surface of the SOI substrate to generate a masking oxide layer, wherein the temperature is 850+-10 DEG C, the time is 30+- minutes, and the thickness of the masking oxide layer is 15+- nm; (2) injecting element Ar in the masking oxide layer, wherein the injection energy is 200+-2 keV, and the injection amount is 1*10<15>+-0.05*10<15>; (3) cleaning the SOI substrate with conventional 3# and 1# cleaning fluids respectively; (4) annealing: annealing the SOI substrate under the atmosphere of pure nitrogen, wherein the annealing temperature is 950+-5 DEG C, and the time is 30+-1 minutes; (5) repeating the operation of the second step to the fourth step 10-20 times; (6) rinsing the SOI substrate in hydrofluoric acid with the mass percent of 0.5% to 10% for 2-10 minutes so as to remove the masking oxide layer; then drying after rinsing cleanly in clear water. According to the method, the damage of injection to the substrate can be reduced, and the pollution and damage problems of the substrate are improved.

Description

technical field [0001] The invention relates to a method for improving SOI substrate surface damage, and belongs to the technical field of silicon integrated circuit manufacturing technology. Background technique [0002] In SOI integrated circuits, in order to improve the radiation resistance of the circuit, the SOI substrate is usually subjected to a reinforcement process. This strengthening process generally uses special elements, special implant energy and relatively large implant dose to implant the buried oxide layer of SOI. After this kind of strengthening process, a large amount of implantation damage and substrate surface contamination will be introduced on the surface of the SOI substrate, which will have a great impact on the reliability of the SOI integrated circuit in the later stage. [0003] A conventional method for reducing damage to the substrate after the strengthening process is to use a cleaning process and a furnace tube annealing process. However, in...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02
CPCH01L21/02052H01L21/02096
Inventor 孙建洁唐剑平吴建伟吴晓鸫
Owner WUXI ZHONGWEI JINGYUAN ELECTRONIC CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap