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A trench charge compensation Schottky semiconductor device and its preparation method

A charge compensation and semiconductor technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, circuits, etc., can solve the problems of low forward turn-on voltage, fast turn-on and turn-off speed, and large reverse leakage current

Active Publication Date: 2017-04-26
北海惠科半导体科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] Power semiconductor devices are widely used in power management and power applications, especially semiconductor devices involving Schottky junctions have become an important trend in device development. Schottky devices have the advantages of low forward turn-on voltage and fast turn-on and turn-off speed. At the same time, Schottky devices also have the disadvantages of large reverse leakage current and cannot be used in high-voltage environments.
[0003] The Schottky diode is most commonly used as a planar layout. The surface of the traditional planar Schottky diode drift region has a sudden electric field distribution curve when reverse biased, so the device has a lower reverse breakdown voltage and a larger reverse voltage. leakage current, while traditional planar Schottky diodes have high on-resistance

Method used

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  • A trench charge compensation Schottky semiconductor device and its preparation method
  • A trench charge compensation Schottky semiconductor device and its preparation method

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Embodiment 1

[0013] figure 1 It is a sectional view of a trench charge compensation Schottky semiconductor device of the present invention, combined below figure 1 The semiconductor device of the present invention will be described in detail.

[0014] A trench charge compensation Schottky semiconductor device, comprising: a substrate layer 1, which is an N conductivity type semiconductor silicon material, and the doping concentration of phosphorus atoms is 1E19 / cm 3 ; The drift layer 3, located on the substrate layer 1, is a semiconductor silicon material of N conductivity type, and the doping concentration of phosphorus atoms is 1E15 / cm 3 ; silicon dioxide 2, located on the surface of the inner wall of the trench, the width of the trench is 2um, the depth of the trench is 10um, and the distance between the trenches is 2um; the polycrystalline first conductivity type semiconductor material 4 is located in the upper part of the trench, and the thickness is 2um, It is a polycrystalline sem...

Embodiment 2

[0023] figure 2 It is a cross-sectional view of the second trench charge compensation Schottky semiconductor device of the present invention, combined below figure 2 The semiconductor device of the present invention will be described in detail.

[0024] A trench charge compensation Schottky semiconductor device, comprising: a substrate layer 1, which is an N conductivity type semiconductor silicon material, and the doping concentration of phosphorus atoms is 1E19 / cm 3 ; The drift layer 3, located on the substrate layer 1, is a semiconductor silicon material of N conductivity type, and the doping concentration of phosphorus atoms is 1E15 / cm 3 ; silicon dioxide 2, located on the surface of the inner wall of the groove, the width of the groove is 2um, the depth of the groove is 10um, and the distance between the grooves is 2um; the polycrystalline second conductivity type semiconductor material 5 is located on the inner wall of the groove, and is of P conductivity type Polycr...

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Abstract

The invention discloses a groove charge compensation schottky semiconductor device. When the semiconductor device is connected with a certain reverse bias voltage, first conduction type semiconductor materials in a drifting layer and polycrystal second conduction type semiconductor materials in grooves form a charge compensation structure to improve reverse breakdown voltage of a device and lower on resistance of the device. The invention also provides a preparation method for the groove charge compensation schottky semiconductor device.

Description

technical field [0001] The invention relates to a trench charge compensation Schottky semiconductor device, and also relates to a preparation method of the trench charge compensation Schottky semiconductor device. The semiconductor device of the present invention is a basic structure for manufacturing semiconductor power devices. Background technique [0002] Power semiconductor devices are widely used in power management and power applications, especially semiconductor devices involving Schottky junctions have become an important trend in device development. Schottky devices have the advantages of low forward turn-on voltage and fast turn-on and turn-off speed. At the same time, Schottky devices also have disadvantages such as large reverse leakage current and cannot be used in high-voltage environments. [0003] The Schottky diode is most commonly used as a planar layout. The surface of the traditional planar Schottky diode drift region has a sudden electric field distrib...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/06H01L29/872H01L21/329
CPCH01L29/0634H01L29/66143H01L29/872
Inventor 朱江
Owner 北海惠科半导体科技有限公司