Double-channel transistor and its manufacturing method

Abstract

The invention discloses a double-channel transistor. The double-channel transistor is made of GaN (gallium nitride), and includes two channels, i.e. a first channel and a second channel, wherein the first channel serves as an interface of a barrier layer and a GaN channel layer, the second channel serves as an interface of a back barrier layer and the GaN channel layer, and the barrier layer and the back barrier layer are both made of AlGaN (aluminum gallium nitride); the thickness of the AlGaN back barrier layer is 20 nm, and the aluminum content is 30 percent; the thickness of the AlGaN barrier layer is 20 nm, and the aluminum content is 30 percent; a substrate of the transistor is a silicon carbide substrate. The double-channel transistor and a preparation method for the double-channel transistor have the advantages that AlGaN with a certain aluminum content and a certain thickness serves as the back barrier layer, so as to form an AlGaN / GaN / AlGaN double heterostructure; a two-dimensional electron gas (2DEG) in the channels is confined in two extremely high barriers through a strong polarization electric field to form the two channels, which improves the 2DEG carrier confinement in the channels and the device reliability.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a high-reliability high-electron-mobility double-channel transistor and a preparation method thereof. Background technique [0002] Aiming at the problem that electrons in the channel of a single heterojunction device tend to overflow under high field and high voltage, thereby reducing the reliability of the device. For single heterojunction devices, the reliability of the device under high field and high voltage is mainly improved through the design of the device structure, such as passivation and increasing the field plate, but the improvement of the device structure and process is inevitable. The introduction of parasitic parameters will lead to the disadvantages of reducing the frequency and efficiency of the device. Therefore, starting from the material structure and fundamentally improving the reliability of the device under high voltage and high field is an effectiv...

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Problems solved by technology

[0006] The technical problem to be solved by the present invention is to provide a double-channel transistor and its preparation method to solve the problem that electrons in the channel of a single heterojunction device are prone to overflow under high field and high voltage in the prior art, thereby reducing the reliability of the device

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