Method for preparing planar sample for transmission electron microscope at specific failure point
An electron microscope and plane sample technology, applied in the field of semiconductors, can solve the problems of being difficult to grasp, being ground, and the method of manual grinding is difficult to control accurately, so as to achieve the effect of improving the success rate
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[0026] The principles and features of the present invention are described below in conjunction with the accompanying drawings, and the examples given are only used to explain the present invention, and are not intended to limit the scope of the present invention.
[0027] Such as Figure 1 to Figure 6 As shown, a method of preparing a planar sample for transmission electron microscopy at a specific point of failure, including:
[0028] Step 1, place the silicon wafer 1 with the specific failure point 2 horizontally on the sample stage 7 of the focused ion beam machine, make a specific failure point mark 3 on the silicon wafer 1, and make a specific failure point mark 3 on the silicon wafer 1 2 for positioning. Specifically, a rectangular specific failure point mark 3 is formed by bombarding with a focused ion beam.
[0029] Step 2, adjust the angle of the sample stage 7 so that the silicon wafer 1 is not perpendicular to the focused ion beam; the angle between the focused io...
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